Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface

Hung Wen Huang; J. T. Chu; C. C. Kao; T. H. Hseuh; Tien-Chang Lu; Hao-Chung Kuo; S. C. Wang; C. C. Yu

doi:10.1088/0957-4484/16/9/071

Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface

Hung Wen Huang, J. T. Chu, C. C. Kao, T. H. Hseuh, Tien-Chang Lu, Hao-Chung Kuo, S. C. Wang^*, C. C. Yu

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Review article › peer-review

100 Scopus citations

Abstract

This investigation describes the development of an InGaN/GaN light emitting diode (LED) with a nano-roughened top p-GaN surface using an Ni nano-mask and laser etching. The light output of the InGaN/GaN LED with a nano-roughened top p-GaN surface is 1.55 times that of a conventional LED, and the wall-plug efficiency is 68% higher at 20 mA. The series resistance of the InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface.

Original language	English
Pages (from-to)	1844-1848
Number of pages	5
Journal	Nanotechnology
Volume	16
Issue number	9
DOIs	https://doi.org/10.1088/0957-4484/16/9/071
State	Published - 1 Sep 2005

Access to Document

10.1088/0957-4484/16/9/071

Cite this

@article{7794fbc964fe4f4a9ba941bb4caec485,

title = "Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface",

abstract = "This investigation describes the development of an InGaN/GaN light emitting diode (LED) with a nano-roughened top p-GaN surface using an Ni nano-mask and laser etching. The light output of the InGaN/GaN LED with a nano-roughened top p-GaN surface is 1.55 times that of a conventional LED, and the wall-plug efficiency is 68% higher at 20 mA. The series resistance of the InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface.",

author = "Huang, {Hung Wen} and Chu, {J. T.} and Kao, {C. C.} and Hseuh, {T. H.} and Tien-Chang Lu and Hao-Chung Kuo and Wang, {S. C.} and Yu, {C. C.}",

year = "2005",

month = sep,

day = "1",

doi = "10.1088/0957-4484/16/9/071",

language = "English",

volume = "16",

pages = "1844--1848",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "9",

}

TY - JOUR

T1 - Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface

AU - Huang, Hung Wen

AU - Chu, J. T.

AU - Kao, C. C.

AU - Hseuh, T. H.

AU - Lu, Tien-Chang

AU - Kuo, Hao-Chung

AU - Wang, S. C.

AU - Yu, C. C.

PY - 2005/9/1

Y1 - 2005/9/1

N2 - This investigation describes the development of an InGaN/GaN light emitting diode (LED) with a nano-roughened top p-GaN surface using an Ni nano-mask and laser etching. The light output of the InGaN/GaN LED with a nano-roughened top p-GaN surface is 1.55 times that of a conventional LED, and the wall-plug efficiency is 68% higher at 20 mA. The series resistance of the InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface.

AB - This investigation describes the development of an InGaN/GaN light emitting diode (LED) with a nano-roughened top p-GaN surface using an Ni nano-mask and laser etching. The light output of the InGaN/GaN LED with a nano-roughened top p-GaN surface is 1.55 times that of a conventional LED, and the wall-plug efficiency is 68% higher at 20 mA. The series resistance of the InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface.

UR - http://www.scopus.com/inward/record.url?scp=23444439608&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/16/9/071

DO - 10.1088/0957-4484/16/9/071

M3 - Review article

AN - SCOPUS:23444439608

SN - 0957-4484

VL - 16

SP - 1844

EP - 1848

JO - Nanotechnology

JF - Nanotechnology

IS - 9

ER -

Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface

Abstract

Access to Document

Other files and links

Fingerprint

Cite this