Enhanced Light Extraction Efficiency of GaN-Based Hybrid Nanorods Light-Emitting Diodes

Jhih Kai Huang, Che Yu Liu, Tzi Pei Chen, Hung Wen Huang, Fang I. Lai, Po-Tsung Lee, Chung Hsiang Lin, Chun Yen Chang, Tsung-Sheng Kao, Hao-Chung Kuo

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24 Scopus citations


High light extraction GaN-based light-emitting diodes (LEDs) with a hybrid structure of straight nanorods located in an array of microholes have been successfully demonstrated. Via the nanoimprint lithography and photolithography techniques, high aspect-ratio light-guiding InGaN/GaN nanorods can be fabricated and regularly arranged in microholes, resulting in a great improvement of the light extraction for the GaN-based LED device. The light output power of the hybrid nanorods LED is 22.04 mW at the driving current standard of 25.4 A/cm 2 , an enhancement of 38.7% to the conventional GaN-based LEDs. Furthermore, with a modification of the hybrid structures' dimensions and locations, the emitted optical energy can be redistributed to obtain light-emitting devices with homogenueous optical field distributions.

Original languageEnglish
Article number7005410
JournalIEEE Journal of Selected Topics in Quantum Electronics
Issue number4
StatePublished - 1 Jul 2015


  • Light emitting diodes
  • Lithography
  • Nanotechnology
  • Optoelectronic devices


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