Original language | English |
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Patent number | US 9,240,474 B2 |
State | Published - 19 Jan 2016 |
Enhanced GaN Transistor and the Forming Method Thereof
Edward Yi Chang (Inventor)
Research output: Patent
Edward Yi Chang (Inventor)
Research output: Patent
Original language | English |
---|---|
Patent number | US 9,240,474 B2 |
State | Published - 19 Jan 2016 |