Enhanced external quantum efficiencies of AlGaN-based deep-UV LEDs using reflective passivation layer

Su Hui Lin; Ming Chun Tseng; Kang Wei Peng; Shouqiang Lai; Meng Chun Shen; Ray-Hua Horng; Shui Yang Lien; Dong Sing Wuu; Hao Chung Kuo; Tingzhu Wu; Zhong Chen

doi:10.1364/OE.441389

Enhanced external quantum efficiencies of AlGaN-based deep-UV LEDs using reflective passivation layer

Su Hui Lin, Ming Chun Tseng, Kang Wei Peng, Shouqiang Lai, Meng Chun Shen, Ray-Hua Horng, Shui Yang Lien, Dong Sing Wuu, Hao Chung Kuo, Tingzhu Wu, Zhong Chen

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

In this study, deep ultraviolet light-emitting diodes (DUV-LEDs) with a reflective passivation layer (RPL) were investigated. The RPL consists of HfO₂/SiO₂ stacks as distributed Bragg reflectors, which are deposited on two DUV-LEDs with different p-GaN thicknesses. The RPL structure improved the external quantum efficiency droops of the DUV-LEDs with thick and thin p-GaN, thereby increasing their light output power by 18.4% and 39.4% under injection current of 500 mA and by 17.9% and 37.9% under injection current of 1000 mA, respectively. The efficiency droops of the DUV-LEDs with and without the RPL with thick p-GaN were 20.1% and 19.1% and with thin p-GaN were 18.0% and 15.6%, respectively. The DUV-LEDs with the RPL presented improved performance. The above results demonstrate the potential for development of the RPLs for DUV-LED applications.

Original language	English
Pages (from-to)	37835-37844
Number of pages	10
Journal	Optics Express
Volume	29
Issue number	23
DOIs	https://doi.org/10.1364/OE.441389
State	Published - 8 Nov 2021

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@article{99978ce8880b48b08ac6a92ff35661bb,

title = "Enhanced external quantum efficiencies of AlGaN-based deep-UV LEDs using reflective passivation layer",

abstract = "In this study, deep ultraviolet light-emitting diodes (DUV-LEDs) with a reflective passivation layer (RPL) were investigated. The RPL consists of HfO2/SiO2 stacks as distributed Bragg reflectors, which are deposited on two DUV-LEDs with different p-GaN thicknesses. The RPL structure improved the external quantum efficiency droops of the DUV-LEDs with thick and thin p-GaN, thereby increasing their light output power by 18.4% and 39.4% under injection current of 500 mA and by 17.9% and 37.9% under injection current of 1000 mA, respectively. The efficiency droops of the DUV-LEDs with and without the RPL with thick p-GaN were 20.1% and 19.1% and with thin p-GaN were 18.0% and 15.6%, respectively. The DUV-LEDs with the RPL presented improved performance. The above results demonstrate the potential for development of the RPLs for DUV-LED applications.",

author = "Lin, {Su Hui} and Tseng, {Ming Chun} and Peng, {Kang Wei} and Shouqiang Lai and Shen, {Meng Chun} and Ray-Hua Horng and Lien, {Shui Yang} and Wuu, {Dong Sing} and Kuo, {Hao Chung} and Tingzhu Wu and Zhong Chen",

note = "Publisher Copyright: {\textcopyright} 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement",

year = "2021",

month = nov,

day = "8",

doi = "10.1364/OE.441389",

language = "English",

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T1 - Enhanced external quantum efficiencies of AlGaN-based deep-UV LEDs using reflective passivation layer

AU - Lin, Su Hui

AU - Tseng, Ming Chun

AU - Peng, Kang Wei

AU - Lai, Shouqiang

AU - Shen, Meng Chun

AU - Horng, Ray-Hua

AU - Lien, Shui Yang

AU - Wuu, Dong Sing

AU - Kuo, Hao Chung

AU - Wu, Tingzhu

AU - Chen, Zhong

PY - 2021/11/8

Y1 - 2021/11/8

N2 - In this study, deep ultraviolet light-emitting diodes (DUV-LEDs) with a reflective passivation layer (RPL) were investigated. The RPL consists of HfO2/SiO2 stacks as distributed Bragg reflectors, which are deposited on two DUV-LEDs with different p-GaN thicknesses. The RPL structure improved the external quantum efficiency droops of the DUV-LEDs with thick and thin p-GaN, thereby increasing their light output power by 18.4% and 39.4% under injection current of 500 mA and by 17.9% and 37.9% under injection current of 1000 mA, respectively. The efficiency droops of the DUV-LEDs with and without the RPL with thick p-GaN were 20.1% and 19.1% and with thin p-GaN were 18.0% and 15.6%, respectively. The DUV-LEDs with the RPL presented improved performance. The above results demonstrate the potential for development of the RPLs for DUV-LED applications.

AB - In this study, deep ultraviolet light-emitting diodes (DUV-LEDs) with a reflective passivation layer (RPL) were investigated. The RPL consists of HfO2/SiO2 stacks as distributed Bragg reflectors, which are deposited on two DUV-LEDs with different p-GaN thicknesses. The RPL structure improved the external quantum efficiency droops of the DUV-LEDs with thick and thin p-GaN, thereby increasing their light output power by 18.4% and 39.4% under injection current of 500 mA and by 17.9% and 37.9% under injection current of 1000 mA, respectively. The efficiency droops of the DUV-LEDs with and without the RPL with thick p-GaN were 20.1% and 19.1% and with thin p-GaN were 18.0% and 15.6%, respectively. The DUV-LEDs with the RPL presented improved performance. The above results demonstrate the potential for development of the RPLs for DUV-LED applications.

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U2 - 10.1364/OE.441389

DO - 10.1364/OE.441389

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C2 - 34808848

AN - SCOPUS:85118590276

SN - 1094-4087

VL - 29

SP - 37835

EP - 37844

JO - Optics Express

JF - Optics Express

IS - 23

ER -

Enhanced external quantum efficiencies of AlGaN-based deep-UV LEDs using reflective passivation layer

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