Enhanced Electrical Characteristics of Ge nMOSFET by Supercritical Fluid CO2Treatment with H2O2Cosolvent

Dun Bao Ruan, Kuei Shu Chang-Liao*, Guan Ting Liu, Yu Chuan Chiu, Kai Jhih Gan, Po Tsun Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Significant improvements on Ge nMOSFET can be achieved by a novel low temperature supercritical phase fluid treatment with H2O2 cosolvent. Thanks to the reduction of oxygen vacancy and unstable oxidation states, devices with the proposed treatment exhibit a low equivalent oxide thickness of 0.67 nm, 2-order reduction on gate leakage current, 7 times improvement on on-current, very low subthreshold swing of 79 mV/dev, high on/off current ratio, small hysteresis of 43.3 mV, low interface trap density, excellent uniformity and reliability characteristics.

Original languageEnglish
Article number9383307
Pages (from-to)645-648
Number of pages4
JournalIeee Electron Device Letters
Volume42
Issue number5
DOIs
StatePublished - May 2021

Keywords

  • cosolvent effect
  • Ge nMOSFET
  • oxygen vacancy
  • supercritical fluid treatment

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