Enhanced Device Characteristics of InGaAs MOSFETs Using High Switching Speed Ferroelectric Material

Ping Huang; Mu Yu Chen; Edward Yi Chang

doi:10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134116

Enhanced Device Characteristics of InGaAs MOSFETs Using High Switching Speed Ferroelectric Material

Ping Huang, Mu Yu Chen, Edward Yi Chang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, InGaAs ferroelectric FET (FE-FET) is shown to have superior performance than baseline MOSFET in terms of DC, short-channel effects, high-frequency and power efficiency by using TCAD simulation. This phenomenon can be attributed to the higher electron velocity, higher device transconductance and intensified gate control in FE-FET due to the amplified effect. Though thicker ferroelectric leads to better DC properties, the optimum ferro-thickness for high-frequency applications is around 7 nm due to the trade-off between electron velocity and parasitic capacitance. Besides, the applied drain-to-source voltage (VDS) is found to be 21 % lower than baseline device with identical cut-off frequency (fT).

Original language	English
Title of host publication	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350334166
DOIs	https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134116
State	Published - 2023
Event	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Hsinchu, Taiwan Duration: 17 Apr 2023 → 20 Apr 2023

Publication series

Name	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

Conference

Conference	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023
Country/Territory	Taiwan
City	Hsinchu
Period	17/04/23 → 20/04/23

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10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134116

Cite this

Huang, P., Chen, M. Y., & Chang, E. Y. (2023). Enhanced Device Characteristics of InGaAs MOSFETs Using High Switching Speed Ferroelectric Material. In 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134116

Huang, Ping ; Chen, Mu Yu ; Chang, Edward Yi. / Enhanced Device Characteristics of InGaAs MOSFETs Using High Switching Speed Ferroelectric Material. 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings).

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title = "Enhanced Device Characteristics of InGaAs MOSFETs Using High Switching Speed Ferroelectric Material",

abstract = "In this work, InGaAs ferroelectric FET (FE-FET) is shown to have superior performance than baseline MOSFET in terms of DC, short-channel effects, high-frequency and power efficiency by using TCAD simulation. This phenomenon can be attributed to the higher electron velocity, higher device transconductance and intensified gate control in FE-FET due to the amplified effect. Though thicker ferroelectric leads to better DC properties, the optimum ferro-thickness for high-frequency applications is around 7 nm due to the trade-off between electron velocity and parasitic capacitance. Besides, the applied drain-to-source voltage (VDS) is found to be 21 % lower than baseline device with identical cut-off frequency (fT).",

author = "Ping Huang and Chen, {Mu Yu} and Chang, {Edward Yi}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 ; Conference date: 17-04-2023 Through 20-04-2023",

year = "2023",

doi = "10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134116",

language = "English",

series = "2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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address = "美國",

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Huang, P, Chen, MY & Chang, EY 2023, Enhanced Device Characteristics of InGaAs MOSFETs Using High Switching Speed Ferroelectric Material. in 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023, Hsinchu, Taiwan, 17/04/23. https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134116

Enhanced Device Characteristics of InGaAs MOSFETs Using High Switching Speed Ferroelectric Material. / Huang, Ping; Chen, Mu Yu; Chang, Edward Yi.
2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Enhanced Device Characteristics of InGaAs MOSFETs Using High Switching Speed Ferroelectric Material

AU - Huang, Ping

AU - Chen, Mu Yu

AU - Chang, Edward Yi

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N2 - In this work, InGaAs ferroelectric FET (FE-FET) is shown to have superior performance than baseline MOSFET in terms of DC, short-channel effects, high-frequency and power efficiency by using TCAD simulation. This phenomenon can be attributed to the higher electron velocity, higher device transconductance and intensified gate control in FE-FET due to the amplified effect. Though thicker ferroelectric leads to better DC properties, the optimum ferro-thickness for high-frequency applications is around 7 nm due to the trade-off between electron velocity and parasitic capacitance. Besides, the applied drain-to-source voltage (VDS) is found to be 21 % lower than baseline device with identical cut-off frequency (fT).

AB - In this work, InGaAs ferroelectric FET (FE-FET) is shown to have superior performance than baseline MOSFET in terms of DC, short-channel effects, high-frequency and power efficiency by using TCAD simulation. This phenomenon can be attributed to the higher electron velocity, higher device transconductance and intensified gate control in FE-FET due to the amplified effect. Though thicker ferroelectric leads to better DC properties, the optimum ferro-thickness for high-frequency applications is around 7 nm due to the trade-off between electron velocity and parasitic capacitance. Besides, the applied drain-to-source voltage (VDS) is found to be 21 % lower than baseline device with identical cut-off frequency (fT).

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M3 - Conference contribution

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T3 - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

BT - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

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Huang P, Chen MY, Chang EY. Enhanced Device Characteristics of InGaAs MOSFETs Using High Switching Speed Ferroelectric Material. In 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2023. (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings). doi: 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134116

Enhanced Device Characteristics of InGaAs MOSFETs Using High Switching Speed Ferroelectric Material

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