Enhanced data retention characteristic on SOHOS-type nonvolatile flash memory with CF4-plasma-induced deep electron trap level

Chih Ren Hsieh; Yung Yu Chen; Wen Shin Lin; Kuo-Jui Lin; Jen Chung Lou

doi:10.1149/1.3568868

Enhanced data retention characteristic on SOHOS-type nonvolatile flash memory with CF₄-plasma-induced deep electron trap level

Chih Ren Hsieh^*, Yung Yu Chen, Wen Shin Lin, Kuo-Jui Lin, Jen Chung Lou

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

The improved data retention characteristics of Polysilicon-oxide-hafnium oxide-oxide-silicon (SOHOS) type nonvolatile memory were obtained by post-HfO₂ trapping layer deposition tetrafluoromethane (CF4) plasma treatment. The memory characteristics such as program/erase speed, retention and endurance were studied comprehensively. That fluorine atoms incorporated into Hf-based high-k material eliminate shallow trap defect level effectively and remain deeper trap level. Although the shallow traps of the HfOF trapping layer SOHOS memory have passivated, it doesn't deteriorate the program/erase speed obviously and retention characteristic was then improved because of deeper electron storage level. The results clearly indicate CF₄ plasma treatment-induced deep electron storage level is a feasible technology for future SOHOS-type nonvolatile flash memory application.

Original language	English
Title of host publication	Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications
Publisher	Electrochemical Society Inc.
Pages	257-263
Number of pages	7
Edition	2
ISBN (Electronic)	9781607682134
ISBN (Print)	9781566778633
DOIs	https://doi.org/10.1149/1.3568868
State	Published - 2011

Publication series

Name	ECS Transactions
Number	2
Volume	35
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

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Hsieh, C. R., Chen, Y. Y., Lin, W. S., Lin, K.-J., & Lou, J. C. (2011). Enhanced data retention characteristic on SOHOS-type nonvolatile flash memory with CF₄-plasma-induced deep electron trap level. In Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications (2 ed., pp. 257-263). (ECS Transactions; Vol. 35, No. 2). Electrochemical Society Inc.. https://doi.org/10.1149/1.3568868

Hsieh, Chih Ren ; Chen, Yung Yu ; Lin, Wen Shin et al. / Enhanced data retention characteristic on SOHOS-type nonvolatile flash memory with CF₄-plasma-induced deep electron trap level. Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications. 2. ed. Electrochemical Society Inc., 2011. pp. 257-263 (ECS Transactions; 2).

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title = "Enhanced data retention characteristic on SOHOS-type nonvolatile flash memory with CF4-plasma-induced deep electron trap level",

abstract = "The improved data retention characteristics of Polysilicon-oxide-hafnium oxide-oxide-silicon (SOHOS) type nonvolatile memory were obtained by post-HfO2 trapping layer deposition tetrafluoromethane (CF4) plasma treatment. The memory characteristics such as program/erase speed, retention and endurance were studied comprehensively. That fluorine atoms incorporated into Hf-based high-k material eliminate shallow trap defect level effectively and remain deeper trap level. Although the shallow traps of the HfOF trapping layer SOHOS memory have passivated, it doesn't deteriorate the program/erase speed obviously and retention characteristic was then improved because of deeper electron storage level. The results clearly indicate CF4 plasma treatment-induced deep electron storage level is a feasible technology for future SOHOS-type nonvolatile flash memory application.",

author = "Hsieh, {Chih Ren} and Chen, {Yung Yu} and Lin, {Wen Shin} and Kuo-Jui Lin and Lou, {Jen Chung}",

year = "2011",

doi = "10.1149/1.3568868",

language = "English",

isbn = "9781566778633",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "2",

pages = "257--263",

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Hsieh, CR, Chen, YY, Lin, WS, Lin, K-J & Lou, JC 2011, Enhanced data retention characteristic on SOHOS-type nonvolatile flash memory with CF₄-plasma-induced deep electron trap level. in Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications. 2 edn, ECS Transactions, no. 2, vol. 35, Electrochemical Society Inc., pp. 257-263. https://doi.org/10.1149/1.3568868

Enhanced data retention characteristic on SOHOS-type nonvolatile flash memory with CF₄-plasma-induced deep electron trap level. / Hsieh, Chih Ren; Chen, Yung Yu; Lin, Wen Shin et al.
Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications. 2. ed. Electrochemical Society Inc., 2011. p. 257-263 (ECS Transactions; Vol. 35, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Enhanced data retention characteristic on SOHOS-type nonvolatile flash memory with CF4-plasma-induced deep electron trap level

AU - Hsieh, Chih Ren

AU - Chen, Yung Yu

AU - Lin, Wen Shin

AU - Lin, Kuo-Jui

AU - Lou, Jen Chung

PY - 2011

Y1 - 2011

N2 - The improved data retention characteristics of Polysilicon-oxide-hafnium oxide-oxide-silicon (SOHOS) type nonvolatile memory were obtained by post-HfO2 trapping layer deposition tetrafluoromethane (CF4) plasma treatment. The memory characteristics such as program/erase speed, retention and endurance were studied comprehensively. That fluorine atoms incorporated into Hf-based high-k material eliminate shallow trap defect level effectively and remain deeper trap level. Although the shallow traps of the HfOF trapping layer SOHOS memory have passivated, it doesn't deteriorate the program/erase speed obviously and retention characteristic was then improved because of deeper electron storage level. The results clearly indicate CF4 plasma treatment-induced deep electron storage level is a feasible technology for future SOHOS-type nonvolatile flash memory application.

AB - The improved data retention characteristics of Polysilicon-oxide-hafnium oxide-oxide-silicon (SOHOS) type nonvolatile memory were obtained by post-HfO2 trapping layer deposition tetrafluoromethane (CF4) plasma treatment. The memory characteristics such as program/erase speed, retention and endurance were studied comprehensively. That fluorine atoms incorporated into Hf-based high-k material eliminate shallow trap defect level effectively and remain deeper trap level. Although the shallow traps of the HfOF trapping layer SOHOS memory have passivated, it doesn't deteriorate the program/erase speed obviously and retention characteristic was then improved because of deeper electron storage level. The results clearly indicate CF4 plasma treatment-induced deep electron storage level is a feasible technology for future SOHOS-type nonvolatile flash memory application.

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BT - Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications

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Hsieh CR, Chen YY, Lin WS, Lin KJ, Lou JC. Enhanced data retention characteristic on SOHOS-type nonvolatile flash memory with CF₄-plasma-induced deep electron trap level. In Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications. 2 ed. Electrochemical Society Inc. 2011. p. 257-263. (ECS Transactions; 2). doi: 10.1149/1.3568868

Enhanced data retention characteristic on SOHOS-type nonvolatile flash memory with CF₄-plasma-induced deep electron trap level

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