Enhanced data retention characteristic on SOHOS-type nonvolatile flash memory with CF4-plasma-induced deep electron trap level

Chih Ren Hsieh*, Yung Yu Chen, Wen Shin Lin, Kuo-Jui Lin, Jen Chung Lou

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    3 Scopus citations

    Abstract

    The improved data retention characteristics of Polysilicon-oxide-hafnium oxide-oxide-silicon (SOHOS) type nonvolatile memory were obtained by post-HfO2 trapping layer deposition tetrafluoromethane (CF4) plasma treatment. The memory characteristics such as program/erase speed, retention and endurance were studied comprehensively. That fluorine atoms incorporated into Hf-based high-k material eliminate shallow trap defect level effectively and remain deeper trap level. Although the shallow traps of the HfOF trapping layer SOHOS memory have passivated, it doesn't deteriorate the program/erase speed obviously and retention characteristic was then improved because of deeper electron storage level. The results clearly indicate CF4 plasma treatment-induced deep electron storage level is a feasible technology for future SOHOS-type nonvolatile flash memory application.

    Original languageEnglish
    Title of host publicationSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications
    Pages257-263
    Number of pages7
    Edition2
    DOIs
    StatePublished - 1 Aug 2011
    EventSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications - 219th ECS Meeting - Montreal, QC, Canada
    Duration: 2 May 20114 May 2011

    Publication series

    NameECS Transactions
    Number2
    Volume35
    ISSN (Print)1938-5862
    ISSN (Electronic)1938-6737

    Conference

    ConferenceSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications - 219th ECS Meeting
    Country/TerritoryCanada
    CityMontreal, QC
    Period2/05/114/05/11

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