Enhance the luminance intensity of InGaN-GaN light-emitting diode by roughening both the p-GaN surface and the undoped-GaN surface using wafer bonding methods

Wei Chih Peng; Yew-Chuhg Wu

doi:10.1149/1.2357084

Enhance the luminance intensity of InGaN-GaN light-emitting diode by roughening both the p-GaN surface and the undoped-GaN surface using wafer bonding methods

Wei Chih Peng^*, Yew-Chuhg Wu

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

An InGaN-GaN light emitting diode (LED) with double roughened surfaces was fabricated by surface-roughening, wafer-bonding and laser lift-off technologies. It was found that the frontside luminance intensity of double roughened LED was 2.77 times higher than that of the conventional LED at an injection current of 20 mA. The backside luminance intensity was 2.37 times higher than that of the conventional LED. This is because the double roughened surfaces can provide photons multiple chances to escape from the LED surface, and redirect photons, which were originally emitted out of the escape cone, back into the escape cone. copyright The Electrochemical Society.

Original language	English
Pages (from-to)	335-338
Number of pages	4
Journal	ECS Transactions
Volume	3
Issue number	6
DOIs	https://doi.org/10.1149/1.2357084
State	Published - 2006
Event	Semiconductor Wafer Bonding 9: Science, Technology, and Applications - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: 29 Oct 2006 → 3 Nov 2006

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10.1149/1.2357084

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title = "Enhance the luminance intensity of InGaN-GaN light-emitting diode by roughening both the p-GaN surface and the undoped-GaN surface using wafer bonding methods",

abstract = "An InGaN-GaN light emitting diode (LED) with double roughened surfaces was fabricated by surface-roughening, wafer-bonding and laser lift-off technologies. It was found that the frontside luminance intensity of double roughened LED was 2.77 times higher than that of the conventional LED at an injection current of 20 mA. The backside luminance intensity was 2.37 times higher than that of the conventional LED. This is because the double roughened surfaces can provide photons multiple chances to escape from the LED surface, and redirect photons, which were originally emitted out of the escape cone, back into the escape cone. copyright The Electrochemical Society.",

author = "Peng, {Wei Chih} and Yew-Chuhg Wu",

year = "2006",

doi = "10.1149/1.2357084",

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journal = "ECS Transactions",

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T1 - Enhance the luminance intensity of InGaN-GaN light-emitting diode by roughening both the p-GaN surface and the undoped-GaN surface using wafer bonding methods

AU - Peng, Wei Chih

AU - Wu, Yew-Chuhg

PY - 2006

Y1 - 2006

N2 - An InGaN-GaN light emitting diode (LED) with double roughened surfaces was fabricated by surface-roughening, wafer-bonding and laser lift-off technologies. It was found that the frontside luminance intensity of double roughened LED was 2.77 times higher than that of the conventional LED at an injection current of 20 mA. The backside luminance intensity was 2.37 times higher than that of the conventional LED. This is because the double roughened surfaces can provide photons multiple chances to escape from the LED surface, and redirect photons, which were originally emitted out of the escape cone, back into the escape cone. copyright The Electrochemical Society.

AB - An InGaN-GaN light emitting diode (LED) with double roughened surfaces was fabricated by surface-roughening, wafer-bonding and laser lift-off technologies. It was found that the frontside luminance intensity of double roughened LED was 2.77 times higher than that of the conventional LED at an injection current of 20 mA. The backside luminance intensity was 2.37 times higher than that of the conventional LED. This is because the double roughened surfaces can provide photons multiple chances to escape from the LED surface, and redirect photons, which were originally emitted out of the escape cone, back into the escape cone. copyright The Electrochemical Society.

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T2 - Semiconductor Wafer Bonding 9: Science, Technology, and Applications - 210th Electrochemical Society Meeting

Y2 - 29 October 2006 through 3 November 2006

ER -

Enhance the luminance intensity of InGaN-GaN light-emitting diode by roughening both the p-GaN surface and the undoped-GaN surface using wafer bonding methods

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