Endurance properties of ferroelectric PZT thin films

Reza Moazzami*, Chen-Ming Hu, William H. Shepherd

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

17 Scopus citations

Abstract

The fatigue behavior of sol-gel derived PZT (lead zirconate titanate) thin films was studied to determine the endurance of nonvolatile ferroelectric memories. The observed capacitance characteristics following polarization cycling are consistent with a domain pinning model. Cycling at low fields improves the endurance significantly. In addition, poling at fields above the cycling field increases the initial remanent polarization and restores the polarization lost from cycling. Both poling and low-field operation may be promising means of improving ferroelectric-memory endurance.

Original languageEnglish
Pages (from-to)417-420
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1990
Event1990 International Electron Devices Meeting - San Francisco, CA, USA
Duration: 9 Dec 199012 Dec 1990

Fingerprint

Dive into the research topics of 'Endurance properties of ferroelectric PZT thin films'. Together they form a unique fingerprint.

Cite this