@inproceedings{2d6d705dedb84c8cb9668e5b6469768c,
title = "Enabling low power and high speed OEICs: First monolithic integration of InGaAs n-FETs and lasers on Si substrate",
abstract = "We report the first monolithic integration of InGaAs channel transistors with lasers on a Si substrate, achieving a milestone in the direction of enabling low power and high speed opto-electronic integrated circuits (OEICs). The III-V layers for realizing transistors and lasers were grown epitaxially on the Si substrate using MBE. InGaAs n-FETs with Ion/Ioff ratio of more than 106 and very low off-state leakage current were realized. In addition, fabrication process with a low overall processing temperature (≤ 400 °C) was used to realize electrically-pumped GaAs/AlGaAs quantum well (QW) lasers with a lasing wavelength of 795 nm and a linewidth of less than 0.5 nm at room temperature.",
author = "Annie Kumar and Lee, {Shuh Ying} and Sachin Yadav and Tan, {Kian Hua} and Loke, {Wan Khai} and Daosheng Li and Satrio Wicaksono and Gengchiau Liang and Yoon, {Soon Fatt} and Xiao Gong and Dimitri Antoniadis and Yeo, {Yee Chia}",
note = "Publisher Copyright: {\textcopyright} 2017 JSAP.; 37th Symposium on VLSI Technology, VLSI Technology 2017 ; Conference date: 05-06-2017 Through 08-06-2017",
year = "2017",
month = jul,
day = "31",
doi = "10.23919/VLSIT.2017.7998199",
language = "English",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "T56--T57",
booktitle = "2017 Symposium on VLSI Technology, VLSI Technology 2017",
address = "美國",
}