Enabling low power and high speed OEICs: First monolithic integration of InGaAs n-FETs and lasers on Si substrate

Annie Kumar, Shuh Ying Lee, Sachin Yadav, Kian Hua Tan, Wan Khai Loke, Daosheng Li, Satrio Wicaksono, Gengchiau Liang, Soon Fatt Yoon, Xiao Gong, Dimitri Antoniadis, Yee Chia Yeo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

We report the first monolithic integration of InGaAs channel transistors with lasers on a Si substrate, achieving a milestone in the direction of enabling low power and high speed opto-electronic integrated circuits (OEICs). The III-V layers for realizing transistors and lasers were grown epitaxially on the Si substrate using MBE. InGaAs n-FETs with Ion/Ioff ratio of more than 106 and very low off-state leakage current were realized. In addition, fabrication process with a low overall processing temperature (≤ 400 °C) was used to realize electrically-pumped GaAs/AlGaAs quantum well (QW) lasers with a lasing wavelength of 795 nm and a linewidth of less than 0.5 nm at room temperature.

Original languageEnglish
Title of host publication2017 Symposium on VLSI Technology, VLSI Technology 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesT56-T57
ISBN (Electronic)9784863486058
DOIs
StatePublished - 31 Jul 2017
Event37th Symposium on VLSI Technology, VLSI Technology 2017 - Kyoto, Japan
Duration: 5 Jun 20178 Jun 2017

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Conference

Conference37th Symposium on VLSI Technology, VLSI Technology 2017
Country/TerritoryJapan
CityKyoto
Period5/06/178/06/17

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