Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes

Shih Chang Shei, Jinn Kong Sheu*, Chi Ming Tsai, Wei Chi Lai, Ming Lun Lee, Cheng-Huang Kuo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

35 Scopus citations


In this study, GaN-based light-emitting diodes (LEDs) were designed with a multi-quantum-well active region, including a yellow-green and a blue quantum well in each period. Photoluminescence (PL) and electroluminescence (EL) measurements revealed two emission bands (at λ∼ 450 and 560 nm) originating from the two well regions. The ratio of blue to yellow-green emission intensities changes with the excitation intensity. In EL, the intensity of the blue emission peak exceeds that of the yellow-green emission peak when a low DC current (I 40mA) is applied. However, when a high pulsed current is applied (I ≧ 100mA) to the LEDs, the intensity of the yellow-green band exceeds that of the blue band, because of the competition between carrier tunneling and band-to-band recombination.

Original languageEnglish
Pages (from-to)2463-2466
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 A
StatePublished - 7 Apr 2006


  • Blue
  • GaN
  • Light-emitting diodes
  • Multi-quantum-well
  • Yellow-green


Dive into the research topics of 'Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes'. Together they form a unique fingerprint.

Cite this