Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes

Shih Chang Shei; Jinn Kong Sheu; Chi Ming Tsai; Wei Chi Lai; Ming Lun Lee; Cheng-Huang Kuo

doi:10.1143/JJAP.45.2463

Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes

Shih Chang Shei, Jinn Kong Sheu^*, Chi Ming Tsai, Wei Chi Lai, Ming Lun Lee, Cheng-Huang Kuo

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

In this study, GaN-based light-emitting diodes (LEDs) were designed with a multi-quantum-well active region, including a yellow-green and a blue quantum well in each period. Photoluminescence (PL) and electroluminescence (EL) measurements revealed two emission bands (at λ∼ 450 and 560 nm) originating from the two well regions. The ratio of blue to yellow-green emission intensities changes with the excitation intensity. In EL, the intensity of the blue emission peak exceeds that of the yellow-green emission peak when a low DC current (I 40mA) is applied. However, when a high pulsed current is applied (I ≧ 100mA) to the LEDs, the intensity of the yellow-green band exceeds that of the blue band, because of the competition between carrier tunneling and band-to-band recombination.

Original language	English
Pages (from-to)	2463-2466
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	4 A
DOIs	https://doi.org/10.1143/JJAP.45.2463
State	Published - 7 Apr 2006

Keywords

Blue
GaN
Light-emitting diodes
Multi-quantum-well
Yellow-green

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title = "Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes",

abstract = "In this study, GaN-based light-emitting diodes (LEDs) were designed with a multi-quantum-well active region, including a yellow-green and a blue quantum well in each period. Photoluminescence (PL) and electroluminescence (EL) measurements revealed two emission bands (at λ∼ 450 and 560 nm) originating from the two well regions. The ratio of blue to yellow-green emission intensities changes with the excitation intensity. In EL, the intensity of the blue emission peak exceeds that of the yellow-green emission peak when a low DC current (I 40mA) is applied. However, when a high pulsed current is applied (I ≧ 100mA) to the LEDs, the intensity of the yellow-green band exceeds that of the blue band, because of the competition between carrier tunneling and band-to-band recombination.",

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author = "Shei, {Shih Chang} and Sheu, {Jinn Kong} and Tsai, {Chi Ming} and Lai, {Wei Chi} and Lee, {Ming Lun} and Cheng-Huang Kuo",

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AU - Shei, Shih Chang

AU - Sheu, Jinn Kong

AU - Tsai, Chi Ming

AU - Lai, Wei Chi

AU - Lee, Ming Lun

AU - Kuo, Cheng-Huang

PY - 2006/4/7

Y1 - 2006/4/7

N2 - In this study, GaN-based light-emitting diodes (LEDs) were designed with a multi-quantum-well active region, including a yellow-green and a blue quantum well in each period. Photoluminescence (PL) and electroluminescence (EL) measurements revealed two emission bands (at λ∼ 450 and 560 nm) originating from the two well regions. The ratio of blue to yellow-green emission intensities changes with the excitation intensity. In EL, the intensity of the blue emission peak exceeds that of the yellow-green emission peak when a low DC current (I 40mA) is applied. However, when a high pulsed current is applied (I ≧ 100mA) to the LEDs, the intensity of the yellow-green band exceeds that of the blue band, because of the competition between carrier tunneling and band-to-band recombination.

AB - In this study, GaN-based light-emitting diodes (LEDs) were designed with a multi-quantum-well active region, including a yellow-green and a blue quantum well in each period. Photoluminescence (PL) and electroluminescence (EL) measurements revealed two emission bands (at λ∼ 450 and 560 nm) originating from the two well regions. The ratio of blue to yellow-green emission intensities changes with the excitation intensity. In EL, the intensity of the blue emission peak exceeds that of the yellow-green emission peak when a low DC current (I 40mA) is applied. However, when a high pulsed current is applied (I ≧ 100mA) to the LEDs, the intensity of the yellow-green band exceeds that of the blue band, because of the competition between carrier tunneling and band-to-band recombination.

KW - Blue

KW - GaN

KW - Light-emitting diodes

KW - Multi-quantum-well

KW - Yellow-green

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ER -

Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes

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