Ellipsometry study on refractive index profiles of the SiO 2/Si3N4/SiO2/Si structure

Tien-Sheng Chao; Chung Len Lee; Tan Fu Lei

doi:10.1063/1.353208

Ellipsometry study on refractive index profiles of the SiO ₂/Si₃N₄/SiO₂/Si structure

Tien-Sheng Chao^*, Chung Len Lee, Tan Fu Lei

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

In this work, the refractive index profiles of SiO₂/Si ₃N₄/SiO₂/silicon (ONO) structures were measured and analyzed by ellipsometry. The ONO structures were obtained by oxidizing the Si₃N₄/SiO₂/silicon structure in a wet O ₂ ambient at the temperature range of 900-1050°C for different lengths of time. It was found that for a nitride film thickness less than 250 Å, oxygen not only oxidized the surface, but diffused through the nitride and oxidized the inner surface of the nitride. This result was confirmed by the Auger analysis. The kinetics of the wet O₂ oxidation of nitride at the above temperature range was linear for an oxidation time of 30-120 min. The activation energy was 2.24 eV.

Original language	English
Pages (from-to)	1732-1736
Number of pages	5
Journal	Journal of Applied Physics
Volume	73
Issue number	4
DOIs	https://doi.org/10.1063/1.353208
State	Published - 1 Dec 1993

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title = "Ellipsometry study on refractive index profiles of the SiO 2/Si3N4/SiO2/Si structure",

abstract = "In this work, the refractive index profiles of SiO2/Si 3N4/SiO2/silicon (ONO) structures were measured and analyzed by ellipsometry. The ONO structures were obtained by oxidizing the Si3N4/SiO2/silicon structure in a wet O 2 ambient at the temperature range of 900-1050°C for different lengths of time. It was found that for a nitride film thickness less than 250 {\AA}, oxygen not only oxidized the surface, but diffused through the nitride and oxidized the inner surface of the nitride. This result was confirmed by the Auger analysis. The kinetics of the wet O2 oxidation of nitride at the above temperature range was linear for an oxidation time of 30-120 min. The activation energy was 2.24 eV.",

author = "Tien-Sheng Chao and Lee, {Chung Len} and Lei, {Tan Fu}",

year = "1993",

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AU - Chao, Tien-Sheng

AU - Lee, Chung Len

AU - Lei, Tan Fu

PY - 1993/12/1

Y1 - 1993/12/1

N2 - In this work, the refractive index profiles of SiO2/Si 3N4/SiO2/silicon (ONO) structures were measured and analyzed by ellipsometry. The ONO structures were obtained by oxidizing the Si3N4/SiO2/silicon structure in a wet O 2 ambient at the temperature range of 900-1050°C for different lengths of time. It was found that for a nitride film thickness less than 250 Å, oxygen not only oxidized the surface, but diffused through the nitride and oxidized the inner surface of the nitride. This result was confirmed by the Auger analysis. The kinetics of the wet O2 oxidation of nitride at the above temperature range was linear for an oxidation time of 30-120 min. The activation energy was 2.24 eV.

AB - In this work, the refractive index profiles of SiO2/Si 3N4/SiO2/silicon (ONO) structures were measured and analyzed by ellipsometry. The ONO structures were obtained by oxidizing the Si3N4/SiO2/silicon structure in a wet O 2 ambient at the temperature range of 900-1050°C for different lengths of time. It was found that for a nitride film thickness less than 250 Å, oxygen not only oxidized the surface, but diffused through the nitride and oxidized the inner surface of the nitride. This result was confirmed by the Auger analysis. The kinetics of the wet O2 oxidation of nitride at the above temperature range was linear for an oxidation time of 30-120 min. The activation energy was 2.24 eV.

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JO - Journal of Applied Physics

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ER -

Ellipsometry study on refractive index profiles of the SiO ₂/Si₃N₄/SiO₂/Si structure

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