Ellipsometric study of the optical properties of InGaAsN layers

Pei-Wen Li; Huei Chen Guang; Nein Yi Li

doi:10.1143/JJAP.39.L898

Ellipsometric study of the optical properties of InGaAsN layers

Pei-Wen Li, Huei Chen Guang, Nein Yi Li

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We report the optical properties of the quaternary compound semiconductor, In_xGa_1-xAs_1-yN_y, with various indium and nitrogen contents. The refractive indices of In_xGa_1-xAs_1-yN_y epilayers were systematically studied by variable angle spectroscopic ellipsometry (VASE) in the wavelength range of 400 to 700 nm. Analysis of the spectroscopic ellipsometry data indicated that the refractive index of In_xGa_1-xAs_1-yN_y increases in proportion to the indium and nitrogen contents. It is also found that the rate of increase of the refractive index in In_xGa_1-xAs_1-yN_y with increasing nitrogen content is much larger than that with increasing indium content. The transition energy E₁ as a function of N composition for In_0.3Ga_0.7As_1-yN_y epilayers was also examined based on the second-derivative spectra of the dielectric function.

Original language	English
Pages (from-to)	L898-L900
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	39
Issue number	9 A/B
DOIs	https://doi.org/10.1143/JJAP.39.L898
State	Published - 15 Sep 2000

Access to Document

10.1143/JJAP.39.L898

Cite this

@article{a0a48b804693440f9436e81a81b38779,

title = "Ellipsometric study of the optical properties of InGaAsN layers",

abstract = "We report the optical properties of the quaternary compound semiconductor, InxGa1-xAs1-yNy, with various indium and nitrogen contents. The refractive indices of InxGa1-xAs1-yNy epilayers were systematically studied by variable angle spectroscopic ellipsometry (VASE) in the wavelength range of 400 to 700 nm. Analysis of the spectroscopic ellipsometry data indicated that the refractive index of InxGa1-xAs1-yNy increases in proportion to the indium and nitrogen contents. It is also found that the rate of increase of the refractive index in InxGa1-xAs1-yNy with increasing nitrogen content is much larger than that with increasing indium content. The transition energy E1 as a function of N composition for In0.3Ga0.7As1-yNy epilayers was also examined based on the second-derivative spectra of the dielectric function.",

author = "Pei-Wen Li and Guang, {Huei Chen} and Li, {Nein Yi}",

year = "2000",

month = sep,

day = "15",

doi = "10.1143/JJAP.39.L898",

language = "English",

volume = "39",

pages = "L898--L900",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "9 A/B",

}

TY - JOUR

T1 - Ellipsometric study of the optical properties of InGaAsN layers

AU - Li, Pei-Wen

AU - Guang, Huei Chen

AU - Li, Nein Yi

PY - 2000/9/15

Y1 - 2000/9/15

N2 - We report the optical properties of the quaternary compound semiconductor, InxGa1-xAs1-yNy, with various indium and nitrogen contents. The refractive indices of InxGa1-xAs1-yNy epilayers were systematically studied by variable angle spectroscopic ellipsometry (VASE) in the wavelength range of 400 to 700 nm. Analysis of the spectroscopic ellipsometry data indicated that the refractive index of InxGa1-xAs1-yNy increases in proportion to the indium and nitrogen contents. It is also found that the rate of increase of the refractive index in InxGa1-xAs1-yNy with increasing nitrogen content is much larger than that with increasing indium content. The transition energy E1 as a function of N composition for In0.3Ga0.7As1-yNy epilayers was also examined based on the second-derivative spectra of the dielectric function.

AB - We report the optical properties of the quaternary compound semiconductor, InxGa1-xAs1-yNy, with various indium and nitrogen contents. The refractive indices of InxGa1-xAs1-yNy epilayers were systematically studied by variable angle spectroscopic ellipsometry (VASE) in the wavelength range of 400 to 700 nm. Analysis of the spectroscopic ellipsometry data indicated that the refractive index of InxGa1-xAs1-yNy increases in proportion to the indium and nitrogen contents. It is also found that the rate of increase of the refractive index in InxGa1-xAs1-yNy with increasing nitrogen content is much larger than that with increasing indium content. The transition energy E1 as a function of N composition for In0.3Ga0.7As1-yNy epilayers was also examined based on the second-derivative spectra of the dielectric function.

UR - http://www.scopus.com/inward/record.url?scp=0034268790&partnerID=8YFLogxK

U2 - 10.1143/JJAP.39.L898

DO - 10.1143/JJAP.39.L898

M3 - Article

AN - SCOPUS:0034268790

SN - 0021-4922

VL - 39

SP - L898-L900

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 9 A/B

ER -

Ellipsometric study of the optical properties of InGaAsN layers

Abstract

Access to Document

Other files and links

Fingerprint

Cite this