Elimination of dielectric degradation for chemical-mechanical planarization of low-k hydrogen silisesquioxane

Ting Chang Chang; Po-Tsun Liu; Tsung Ming Tsai; Fon Shan Yeh; Tseung-Yuen Tseng; Ming Shih Tsai; Ben Chang Chen; Ya Liang Yang; Simon M. Sze

doi:10.1143/JJAP.40.3143

Elimination of dielectric degradation for chemical-mechanical planarization of low-k hydrogen silisesquioxane

Ting Chang Chang^*, Po-Tsun Liu, Tsung Ming Tsai, Fon Shan Yeh, Tseung-Yuen Tseng, Ming Shih Tsai, Ben Chang Chen, Ya Liang Yang, Simon M. Sze

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The characteristics of post-chemical mechanical polishing (post-CMP) low-k hydrogen silsesquioxane (HSQ) have been investigated in this work. Dielectric properties of HSQ are damaged by the CMP process. We propose NH₃-plasma treatment to improve the characteristics of post-CMP HSQ film. Both of the leakage current and dielectric constant of NH₃ plasma-treated HSQ are significantly decreased as compared with those of untreated HSQ. NH₃ plasma treatment slightly nitridates the surfaces of the polished HSQ film. The thin nitride layer prevents moisture absorption in the post-CMP HSQ. As a result, the dielectric degradation of HSQ after the CMP process can be effectively recovered using the NH₃ plasma treatment.

Original language	English
Pages (from-to)	3143-3146
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	40
Issue number	5R
DOIs	https://doi.org/10.1143/JJAP.40.3143
State	Published - May 2001

Keywords

CMP
Dielectric degradation
HSQ
Low k
NH plasma treatment
Recover

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10.1143/JJAP.40.3143

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Chang, T. C., Liu, P.-T., Tsai, T. M., Yeh, F. S., Tseng, T.-Y., Tsai, M. S., Chen, B. C., Yang, Y. L., & Sze, S. M. (2001). Elimination of dielectric degradation for chemical-mechanical planarization of low-k hydrogen silisesquioxane. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 40(5R), 3143-3146. https://doi.org/10.1143/JJAP.40.3143

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title = "Elimination of dielectric degradation for chemical-mechanical planarization of low-k hydrogen silisesquioxane",

abstract = "The characteristics of post-chemical mechanical polishing (post-CMP) low-k hydrogen silsesquioxane (HSQ) have been investigated in this work. Dielectric properties of HSQ are damaged by the CMP process. We propose NH3-plasma treatment to improve the characteristics of post-CMP HSQ film. Both of the leakage current and dielectric constant of NH3 plasma-treated HSQ are significantly decreased as compared with those of untreated HSQ. NH3 plasma treatment slightly nitridates the surfaces of the polished HSQ film. The thin nitride layer prevents moisture absorption in the post-CMP HSQ. As a result, the dielectric degradation of HSQ after the CMP process can be effectively recovered using the NH3 plasma treatment.",

keywords = "CMP, Dielectric degradation, HSQ, Low k, NH plasma treatment, Recover",

author = "Chang, {Ting Chang} and Po-Tsun Liu and Tsai, {Tsung Ming} and Yeh, {Fon Shan} and Tseung-Yuen Tseng and Tsai, {Ming Shih} and Chen, {Ben Chang} and Yang, {Ya Liang} and Sze, {Simon M.}",

year = "2001",

month = may,

doi = "10.1143/JJAP.40.3143",

language = "English",

volume = "40",

pages = "3143--3146",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "5R",

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Chang, TC, Liu, P-T, Tsai, TM, Yeh, FS, Tseng, T-Y, Tsai, MS, Chen, BC, Yang, YL & Sze, SM 2001, 'Elimination of dielectric degradation for chemical-mechanical planarization of low-k hydrogen silisesquioxane', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 40, no. 5R, pp. 3143-3146. https://doi.org/10.1143/JJAP.40.3143

Elimination of dielectric degradation for chemical-mechanical planarization of low-k hydrogen silisesquioxane. / Chang, Ting Chang; Liu, Po-Tsun; Tsai, Tsung Ming et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 5R, 05.2001, p. 3143-3146.

Research output: Contribution to journal › Article › peer-review

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T1 - Elimination of dielectric degradation for chemical-mechanical planarization of low-k hydrogen silisesquioxane

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Tsai, Tsung Ming

AU - Yeh, Fon Shan

AU - Tseng, Tseung-Yuen

AU - Tsai, Ming Shih

AU - Chen, Ben Chang

AU - Yang, Ya Liang

AU - Sze, Simon M.

PY - 2001/5

Y1 - 2001/5

N2 - The characteristics of post-chemical mechanical polishing (post-CMP) low-k hydrogen silsesquioxane (HSQ) have been investigated in this work. Dielectric properties of HSQ are damaged by the CMP process. We propose NH3-plasma treatment to improve the characteristics of post-CMP HSQ film. Both of the leakage current and dielectric constant of NH3 plasma-treated HSQ are significantly decreased as compared with those of untreated HSQ. NH3 plasma treatment slightly nitridates the surfaces of the polished HSQ film. The thin nitride layer prevents moisture absorption in the post-CMP HSQ. As a result, the dielectric degradation of HSQ after the CMP process can be effectively recovered using the NH3 plasma treatment.

AB - The characteristics of post-chemical mechanical polishing (post-CMP) low-k hydrogen silsesquioxane (HSQ) have been investigated in this work. Dielectric properties of HSQ are damaged by the CMP process. We propose NH3-plasma treatment to improve the characteristics of post-CMP HSQ film. Both of the leakage current and dielectric constant of NH3 plasma-treated HSQ are significantly decreased as compared with those of untreated HSQ. NH3 plasma treatment slightly nitridates the surfaces of the polished HSQ film. The thin nitride layer prevents moisture absorption in the post-CMP HSQ. As a result, the dielectric degradation of HSQ after the CMP process can be effectively recovered using the NH3 plasma treatment.

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KW - Dielectric degradation

KW - HSQ

KW - Low k

KW - NH plasma treatment

KW - Recover

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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IS - 5R

ER -

Elimination of dielectric degradation for chemical-mechanical planarization of low-k hydrogen silisesquioxane

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