O2 plasma ashing and wet stripper treatment were shown to lead to the dielectric degradation in OSG film during photoresist removal processing. The dielectric degradation results from the moisture uptake. It was confirmed that TMCS treatment is an effective method to negate the dielectric degradation in the OSG film for the photoresist removal application.
|Number of pages||6|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - 1 Jul 2002|
|Event||Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States|
Duration: 6 Jan 2002 → 10 Jan 2002