Electrostatic discharge protection circuits in CMOS IC's using the lateral SCR devices: An overview

Ming-Dou Ker

doi:10.1109/ICECS.1998.813332

Electrostatic discharge protection circuits in CMOS IC's using the lateral SCR devices: An overview

Ming-Dou Ker^*

^*Corresponding author for this work

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Scopus citations

Abstract

An overview on the electrostatic discharge (ESD) protection circuits by using the lateral SCR devices in CMOS IC's is presented. The history of the lateral SCR devices used for on-chip ESD protection is introduced. The practical problem of using the SCR devices in the ESD protection circuits of CMOS IC's is also discussed. Such SCR devices have been found to be accidentally triggered on by the noisy pulses when the IC's are in the normal operating conditions. To overcome this problem, two solutions are proposed to safely apply the SCR devices for effective ESD protection in the CMOS IC's.

Original language	English
Title of host publication	Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	325-328
Number of pages	4
ISBN (Electronic)	0780350081
DOIs	https://doi.org/10.1109/ICECS.1998.813332
State	Published - 1998
Event	5th IEEE International Conference on Electronics, Circuits and Systems, ICECS 1998 - Lisboa, Portugal Duration: 7 Sep 1998 → 10 Sep 1998

Publication series

Name	Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
Volume	1

Conference

Conference	5th IEEE International Conference on Electronics, Circuits and Systems, ICECS 1998
Country/Territory	Portugal
City	Lisboa
Period	7/09/98 → 10/09/98

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10.1109/ICECS.1998.813332

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Ker, M.-D. (1998). Electrostatic discharge protection circuits in CMOS IC's using the lateral SCR devices: An overview. In Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems (pp. 325-328). Article 813332 (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems; Vol. 1). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICECS.1998.813332

Ker, Ming-Dou. / Electrostatic discharge protection circuits in CMOS IC's using the lateral SCR devices : An overview. Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems. Institute of Electrical and Electronics Engineers Inc., 1998. pp. 325-328 (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems).

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title = "Electrostatic discharge protection circuits in CMOS IC's using the lateral SCR devices: An overview",

abstract = "An overview on the electrostatic discharge (ESD) protection circuits by using the lateral SCR devices in CMOS IC's is presented. The history of the lateral SCR devices used for on-chip ESD protection is introduced. The practical problem of using the SCR devices in the ESD protection circuits of CMOS IC's is also discussed. Such SCR devices have been found to be accidentally triggered on by the noisy pulses when the IC's are in the normal operating conditions. To overcome this problem, two solutions are proposed to safely apply the SCR devices for effective ESD protection in the CMOS IC's.",

author = "Ming-Dou Ker",

note = "Publisher Copyright: {\textcopyright} 1998 IEEE.; 5th IEEE International Conference on Electronics, Circuits and Systems, ICECS 1998 ; Conference date: 07-09-1998 Through 10-09-1998",

year = "1998",

doi = "10.1109/ICECS.1998.813332",

language = "English",

series = "Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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address = "美國",

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Ker, M-D 1998, Electrostatic discharge protection circuits in CMOS IC's using the lateral SCR devices: An overview. in Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems., 813332, Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems, vol. 1, Institute of Electrical and Electronics Engineers Inc., pp. 325-328, 5th IEEE International Conference on Electronics, Circuits and Systems, ICECS 1998, Lisboa, Portugal, 7/09/98. https://doi.org/10.1109/ICECS.1998.813332

Electrostatic discharge protection circuits in CMOS IC's using the lateral SCR devices: An overview. / Ker, Ming-Dou.
Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems. Institute of Electrical and Electronics Engineers Inc., 1998. p. 325-328 813332 (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Ker, Ming-Dou

PY - 1998

Y1 - 1998

N2 - An overview on the electrostatic discharge (ESD) protection circuits by using the lateral SCR devices in CMOS IC's is presented. The history of the lateral SCR devices used for on-chip ESD protection is introduced. The practical problem of using the SCR devices in the ESD protection circuits of CMOS IC's is also discussed. Such SCR devices have been found to be accidentally triggered on by the noisy pulses when the IC's are in the normal operating conditions. To overcome this problem, two solutions are proposed to safely apply the SCR devices for effective ESD protection in the CMOS IC's.

AB - An overview on the electrostatic discharge (ESD) protection circuits by using the lateral SCR devices in CMOS IC's is presented. The history of the lateral SCR devices used for on-chip ESD protection is introduced. The practical problem of using the SCR devices in the ESD protection circuits of CMOS IC's is also discussed. Such SCR devices have been found to be accidentally triggered on by the noisy pulses when the IC's are in the normal operating conditions. To overcome this problem, two solutions are proposed to safely apply the SCR devices for effective ESD protection in the CMOS IC's.

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T3 - Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems

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BT - Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 7 September 1998 through 10 September 1998

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Ker MD. Electrostatic discharge protection circuits in CMOS IC's using the lateral SCR devices: An overview. In Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems. Institute of Electrical and Electronics Engineers Inc. 1998. p. 325-328. 813332. (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems). doi: 10.1109/ICECS.1998.813332

Electrostatic discharge protection circuits in CMOS IC's using the lateral SCR devices: An overview

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