Electrooptical properties of GaNAs/GaAs multiple quantum well structures

Jia Ren Lee; Yo Yu Chen; Chien Rong Lu; Wei-I Lee; Shih Chang Lee

doi:10.1016/S0921-5107(03)00112-0

Electrooptical properties of GaNAs/GaAs multiple quantum well structures

Jia Ren Lee, Yo Yu Chen, Chien Rong Lu^*, Wei-I Lee, Shih Chang Lee

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The electrooptical properties of the GaNAs/GaAs multiple quantum well structures have been studied using the photoreflectance spectroscopy from 20 K to room temperature. Above the band gap energy of GaAs, Franz-Keldysh oscillations were observed. The period of the Franz-Keldysh oscillations decreased slightly with decreasing temperature, and indicated that the corresponding space charge distribution varied slowly with temperature. The modulated quantum well transition features were observed below the band gap energy of GaAs. A matrix transfer algorithm was used to calculate the quantum well subband energies numerically. The band gap energy and the electron effective mass of the GaNAs/GaAs system were adjusted to obtain the subband energies to best fit the observed quantum well transition energies.

Original language	English
Pages (from-to)	248-251
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	100
Issue number	3
DOIs	https://doi.org/10.1016/S0921-5107(03)00112-0
State	Published - 25 Jul 2003

Keywords

GaNAs/GaAs
Photoreflectance
Quantum well

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10.1016/S0921-5107(03)00112-0

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title = "Electrooptical properties of GaNAs/GaAs multiple quantum well structures",

abstract = "The electrooptical properties of the GaNAs/GaAs multiple quantum well structures have been studied using the photoreflectance spectroscopy from 20 K to room temperature. Above the band gap energy of GaAs, Franz-Keldysh oscillations were observed. The period of the Franz-Keldysh oscillations decreased slightly with decreasing temperature, and indicated that the corresponding space charge distribution varied slowly with temperature. The modulated quantum well transition features were observed below the band gap energy of GaAs. A matrix transfer algorithm was used to calculate the quantum well subband energies numerically. The band gap energy and the electron effective mass of the GaNAs/GaAs system were adjusted to obtain the subband energies to best fit the observed quantum well transition energies.",

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author = "Lee, {Jia Ren} and Chen, {Yo Yu} and Lu, {Chien Rong} and Wei-I Lee and Lee, {Shih Chang}",

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T1 - Electrooptical properties of GaNAs/GaAs multiple quantum well structures

AU - Lee, Jia Ren

AU - Chen, Yo Yu

AU - Lu, Chien Rong

AU - Lee, Wei-I

AU - Lee, Shih Chang

PY - 2003/7/25

Y1 - 2003/7/25

N2 - The electrooptical properties of the GaNAs/GaAs multiple quantum well structures have been studied using the photoreflectance spectroscopy from 20 K to room temperature. Above the band gap energy of GaAs, Franz-Keldysh oscillations were observed. The period of the Franz-Keldysh oscillations decreased slightly with decreasing temperature, and indicated that the corresponding space charge distribution varied slowly with temperature. The modulated quantum well transition features were observed below the band gap energy of GaAs. A matrix transfer algorithm was used to calculate the quantum well subband energies numerically. The band gap energy and the electron effective mass of the GaNAs/GaAs system were adjusted to obtain the subband energies to best fit the observed quantum well transition energies.

AB - The electrooptical properties of the GaNAs/GaAs multiple quantum well structures have been studied using the photoreflectance spectroscopy from 20 K to room temperature. Above the band gap energy of GaAs, Franz-Keldysh oscillations were observed. The period of the Franz-Keldysh oscillations decreased slightly with decreasing temperature, and indicated that the corresponding space charge distribution varied slowly with temperature. The modulated quantum well transition features were observed below the band gap energy of GaAs. A matrix transfer algorithm was used to calculate the quantum well subband energies numerically. The band gap energy and the electron effective mass of the GaNAs/GaAs system were adjusted to obtain the subband energies to best fit the observed quantum well transition energies.

KW - GaNAs/GaAs

KW - Photoreflectance

KW - Quantum well

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DO - 10.1016/S0921-5107(03)00112-0

M3 - Article

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JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 3

ER -

Electrooptical properties of GaNAs/GaAs multiple quantum well structures

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Keywords

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