Electronic structure and charge transport mechanism in a forming-free SiOx-based memristor

Andrei A. Gismatulin; Vitalii A. Voronkovskii; Gennadiy N. Kamaev; Yuriy N. Novikov; Vladimir N. Kruchinin; Grigory K. Krivyakin; Vladimir A. Gritsenko; Igor P. Prosvirin; Albert Chin

doi:10.1088/1361-6528/abb505

Electronic structure and charge transport mechanism in a forming-free SiOx-based memristor

Andrei A. Gismatulin, Vitalii A. Voronkovskii, Gennadiy N. Kamaev, Yuriy N. Novikov^*, Vladimir N. Kruchinin, Grigory K. Krivyakin, Vladimir A. Gritsenko, Igor P. Prosvirin, Albert Chin

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

THe memristor is a key memory element for neuromorphic electronics and new generation flash memories. One of the most promising materials for memristor technology is silicon oxide SiOx, which is compatible with silicon-based technology. In this paper, the electronic structure and charge transport mechanism in a forming-free SiOx-based memristor fabricated with the plasma enhanced chemical vapor deposition method is investigated. The experimental current-voltage characteristics measured at different temperatures in high-resistance, low-resistance and intermediate states are compared with various charge transport theories. The charge transport in all states is limited by the space charge-limited current model. The trap parameters, responsible for the charge transport in a SiOx-based memristor in different states, are determined.

Original language	English
Article number	505704
Number of pages	10
Journal	Nanotechnology
Volume	31
Issue number	50
DOIs	https://doi.org/10.1088/1361-6528/abb505
State	Published - 11 Dec 2020

Keywords

memristor
SiOx
charge transport mechanism
electronic structure
SILICON-OXIDE
RESISTANCE
CONDUCTION
PHOTOLUMINESCENCE
DEVICE
RERAM
FIELD

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@article{1660f62b5e7d419b8598ccbfbbc54b2a,

title = "Electronic structure and charge transport mechanism in a forming-free SiOx-based memristor",

abstract = "THe memristor is a key memory element for neuromorphic electronics and new generation flash memories. One of the most promising materials for memristor technology is silicon oxide SiOx, which is compatible with silicon-based technology. In this paper, the electronic structure and charge transport mechanism in a forming-free SiOx-based memristor fabricated with the plasma enhanced chemical vapor deposition method is investigated. The experimental current-voltage characteristics measured at different temperatures in high-resistance, low-resistance and intermediate states are compared with various charge transport theories. The charge transport in all states is limited by the space charge-limited current model. The trap parameters, responsible for the charge transport in a SiOx-based memristor in different states, are determined.",

keywords = "memristor, SiOx, charge transport mechanism, electronic structure, SILICON-OXIDE, RESISTANCE, CONDUCTION, PHOTOLUMINESCENCE, DEVICE, RERAM, FIELD",

author = "Gismatulin, {Andrei A.} and Voronkovskii, {Vitalii A.} and Kamaev, {Gennadiy N.} and Novikov, {Yuriy N.} and Kruchinin, {Vladimir N.} and Krivyakin, {Grigory K.} and Gritsenko, {Vladimir A.} and Prosvirin, {Igor P.} and Albert Chin",

year = "2020",

month = dec,

day = "11",

doi = "10.1088/1361-6528/abb505",

language = "English",

volume = "31",

journal = "Nanotechnology",

issn = "0957-4484",

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T1 - Electronic structure and charge transport mechanism in a forming-free SiOx-based memristor

AU - Gismatulin, Andrei A.

AU - Voronkovskii, Vitalii A.

AU - Kamaev, Gennadiy N.

AU - Novikov, Yuriy N.

AU - Kruchinin, Vladimir N.

AU - Krivyakin, Grigory K.

AU - Gritsenko, Vladimir A.

AU - Prosvirin, Igor P.

AU - Chin, Albert

PY - 2020/12/11

Y1 - 2020/12/11

N2 - THe memristor is a key memory element for neuromorphic electronics and new generation flash memories. One of the most promising materials for memristor technology is silicon oxide SiOx, which is compatible with silicon-based technology. In this paper, the electronic structure and charge transport mechanism in a forming-free SiOx-based memristor fabricated with the plasma enhanced chemical vapor deposition method is investigated. The experimental current-voltage characteristics measured at different temperatures in high-resistance, low-resistance and intermediate states are compared with various charge transport theories. The charge transport in all states is limited by the space charge-limited current model. The trap parameters, responsible for the charge transport in a SiOx-based memristor in different states, are determined.

AB - THe memristor is a key memory element for neuromorphic electronics and new generation flash memories. One of the most promising materials for memristor technology is silicon oxide SiOx, which is compatible with silicon-based technology. In this paper, the electronic structure and charge transport mechanism in a forming-free SiOx-based memristor fabricated with the plasma enhanced chemical vapor deposition method is investigated. The experimental current-voltage characteristics measured at different temperatures in high-resistance, low-resistance and intermediate states are compared with various charge transport theories. The charge transport in all states is limited by the space charge-limited current model. The trap parameters, responsible for the charge transport in a SiOx-based memristor in different states, are determined.

KW - memristor

KW - SiOx

KW - charge transport mechanism

KW - electronic structure

KW - SILICON-OXIDE

KW - RESISTANCE

KW - CONDUCTION

KW - PHOTOLUMINESCENCE

KW - DEVICE

KW - RERAM

KW - FIELD

U2 - 10.1088/1361-6528/abb505

DO - 10.1088/1361-6528/abb505

M3 - Article

C2 - 33021224

SN - 0957-4484

VL - 31

JO - Nanotechnology

JF - Nanotechnology

IS - 50

M1 - 505704

ER -

Electronic structure and charge transport mechanism in a forming-free SiOx-based memristor

Abstract

Keywords

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