Electronic conductivity and electromigration in metallic microstructures

R. S. Sorbello*, Chon-Saar Chu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


A general approach is described for evaluating the local electric field and the d.c. conductivity of a metallic microstructure in the regime where quantum interference due to defects and interfaces is dominant. The approach is based upon Landauer's analysis of localized scatterers. The method is applied to the case of impurity scattering near the surface of a very thin film. It is found that the resistivity and electromigration driving force increase with decreasing film thickness.

Original languageEnglish
Pages (from-to)467-469
Number of pages3
JournalSuperlattices and Microstructures
Issue number5
StatePublished - 1 Jan 1987


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