Electronic conductivity and electromigration in metallic microstructures

R. S. Sorbello; Chon-Saar Chu

doi:10.1016/0749-6036(87)90225-4

Electronic conductivity and electromigration in metallic microstructures

R. S. Sorbello^*, Chon-Saar Chu

^*Corresponding author for this work

College of Photonics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A general approach is described for evaluating the local electric field and the d.c. conductivity of a metallic microstructure in the regime where quantum interference due to defects and interfaces is dominant. The approach is based upon Landauer's analysis of localized scatterers. The method is applied to the case of impurity scattering near the surface of a very thin film. It is found that the resistivity and electromigration driving force increase with decreasing film thickness.

Original language	English
Pages (from-to)	467-469
Number of pages	3
Journal	Superlattices and Microstructures
Volume	3
Issue number	5
DOIs	https://doi.org/10.1016/0749-6036(87)90225-4
State	Published - 1 Jan 1987

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10.1016/0749-6036(87)90225-4

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title = "Electronic conductivity and electromigration in metallic microstructures",

abstract = "A general approach is described for evaluating the local electric field and the d.c. conductivity of a metallic microstructure in the regime where quantum interference due to defects and interfaces is dominant. The approach is based upon Landauer's analysis of localized scatterers. The method is applied to the case of impurity scattering near the surface of a very thin film. It is found that the resistivity and electromigration driving force increase with decreasing film thickness.",

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AU - Sorbello, R. S.

AU - Chu, Chon-Saar

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N2 - A general approach is described for evaluating the local electric field and the d.c. conductivity of a metallic microstructure in the regime where quantum interference due to defects and interfaces is dominant. The approach is based upon Landauer's analysis of localized scatterers. The method is applied to the case of impurity scattering near the surface of a very thin film. It is found that the resistivity and electromigration driving force increase with decreasing film thickness.

AB - A general approach is described for evaluating the local electric field and the d.c. conductivity of a metallic microstructure in the regime where quantum interference due to defects and interfaces is dominant. The approach is based upon Landauer's analysis of localized scatterers. The method is applied to the case of impurity scattering near the surface of a very thin film. It is found that the resistivity and electromigration driving force increase with decreasing film thickness.

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U2 - 10.1016/0749-6036(87)90225-4

DO - 10.1016/0749-6036(87)90225-4

M3 - Article

AN - SCOPUS:0023568843

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EP - 469

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

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ER -

Electronic conductivity and electromigration in metallic microstructures

Abstract

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