Electronic and bonding structures of B-C-N thin films investigated by x-ray absorption and photoemission spectroscopy

S. C. Ray, H. M. Tsai, C. W. Bao, J. W. Chiou, J. C. Jan, K. P.Krishna Kumar, W. F. Pong*, M. H. Tsai, S. Chattopadhyay, L. C. Chen, S. C. Chien, M. T. Lee, S. T. Lin, K. H. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

The investigation of the electronic and bonding structures of B-C-N thin films was carried out using X-ray absorption near-edge structure (XANES) and valence-band photoelectron spectroscopy (PES). The intensities of the sp 2-bonded features in the CK-edge XANES spectra was observed to decrease with the increase in C concentration, whereas those in the spectra of NK-edge XANES increase with the N concentration. The decrease of the intensities of the sp2-bonded features in the C and NK-edges XANES spectra was correlated with the increase of the N/B and C/B concentration ratios and the Young's modulus. It was found that the Valence-band PES spectra were insensitive to the variations of the B and C concentrations in B-C-N compounds.

Original languageEnglish
Pages (from-to)208-211
Number of pages4
JournalJournal of Applied Physics
Volume96
Issue number1
DOIs
StatePublished - 1 Jul 2004

Fingerprint

Dive into the research topics of 'Electronic and bonding structures of B-C-N thin films investigated by x-ray absorption and photoemission spectroscopy'. Together they form a unique fingerprint.

Cite this