Abstract
We present measurements of the electronic tunneling density of states of ultrathin films with sheet resistances at 8 K in the range 100 Ω<R<100 kΩ. We find that in the strongly disordered regime the Coulomb anomaly in the tunneling density of states grows in strength with R in a manner which depends strongly on film structure. These data demonstrate that the effective electron-electron interactions in disordered films depend on film structure in this regime. We discuss the implications of this behavior for the properties of superconductors near the two-dimensional superconductor-to- insulator transition.
Original language | English |
---|---|
Pages (from-to) | 16600-16604 |
Number of pages | 5 |
Journal | Physical Review B |
Volume | 49 |
Issue number | 23 |
DOIs | |
State | Published - 1994 |