Electron tunneling into strongly disordered films: The influence of structure on electron-electron interactions

Shih-Ying Hsu*, J. M. Valles

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

We present measurements of the electronic tunneling density of states of ultrathin films with sheet resistances at 8 K in the range 100 Ω<R<100 kΩ. We find that in the strongly disordered regime the Coulomb anomaly in the tunneling density of states grows in strength with R in a manner which depends strongly on film structure. These data demonstrate that the effective electron-electron interactions in disordered films depend on film structure in this regime. We discuss the implications of this behavior for the properties of superconductors near the two-dimensional superconductor-to- insulator transition.

Original languageEnglish
Pages (from-to)16600-16604
Number of pages5
JournalPhysical Review B
Volume49
Issue number23
DOIs
StatePublished - 1 Jan 1994

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