ELECTRON TRAPPING IN VERY THIN THERMAL SILICON DIOXIDES.

Mong Song Liang^*, Chen-Ming Hu

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

103 Scopus citations

Original language	English
Pages (from-to)	396-399
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1981.190097
State	Published - 1 Dec 1981

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title = "ELECTRON TRAPPING IN VERY THIN THERMAL SILICON DIOXIDES.",

author = "Liang, {Mong Song} and Chen-Ming Hu",

year = "1981",

month = dec,

day = "1",

doi = "10.1109/IEDM.1981.190097",

language = "English",

pages = "396--399",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - ELECTRON TRAPPING IN VERY THIN THERMAL SILICON DIOXIDES.

AU - Liang, Mong Song

AU - Hu, Chen-Ming

PY - 1981/12/1

Y1 - 1981/12/1

UR - http://www.scopus.com/inward/record.url?scp=0019665266&partnerID=8YFLogxK

U2 - 10.1109/IEDM.1981.190097

DO - 10.1109/IEDM.1981.190097

M3 - Conference article

AN - SCOPUS:0019665266

SP - 396

EP - 399

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

ER -