Electron-phonon-impurity interference effect in disordered Au56Pd44 and IrO2 thick films

S. S. Yeh*, J. J. Lin, Jing Xiunian, Zhang Dianlin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Scopus citations


We have fabricated a series of Au56Pd44 thick films with a wide range of residual resistivity ρ0 varying from 40to280μΩcm. The resistivities of these films were measured between 15 and 300K. We found that at temperatures below about 0.1θD (θD is the Debye temperature), the interference mechanism between the elastic electron scattering and electron-phonon scattering (the electron-phonon-impurity interference effect) contributes significantly to the measured resistivities. Our results support the current theoretical idea that this interference-mechanism-induced resistivity varies with ρ0T2, where T is the temperature. Similar observation has also been made in disordered, conducting transition-metal oxide IrO2 thick films.

Original languageEnglish
Article number024204
Pages (from-to)2-5
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number2
StatePublished - 1 Jul 2005


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