Electron-phonon-impurity interference effect in disordered Au56Pd44 and IrO2 thick films

S. S. Yeh; J. J. Lin; Jing Xiunian; Zhang Dianlin

doi:10.1103/PhysRevB.72.024204

Electron-phonon-impurity interference effect in disordered Au₅₆Pd₄₄ and IrO₂ thick films

S. S. Yeh^*, J. J. Lin, Jing Xiunian, Zhang Dianlin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

We have fabricated a series of Au56Pd44 thick films with a wide range of residual resistivity ρ0 varying from 40to280μΩcm. The resistivities of these films were measured between 15 and 300K. We found that at temperatures below about 0.1θD (θD is the Debye temperature), the interference mechanism between the elastic electron scattering and electron-phonon scattering (the electron-phonon-impurity interference effect) contributes significantly to the measured resistivities. Our results support the current theoretical idea that this interference-mechanism-induced resistivity varies with ρ0T2, where T is the temperature. Similar observation has also been made in disordered, conducting transition-metal oxide IrO2 thick films.

Original language	English
Article number	024204
Pages (from-to)	2-5
Number of pages	5
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	72
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevB.72.024204
State	Published - 1 Jul 2005

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title = "Electron-phonon-impurity interference effect in disordered Au56Pd44 and IrO2 thick films",

abstract = "We have fabricated a series of Au56Pd44 thick films with a wide range of residual resistivity ρ0 varying from 40to280μΩcm. The resistivities of these films were measured between 15 and 300K. We found that at temperatures below about 0.1θD (θD is the Debye temperature), the interference mechanism between the elastic electron scattering and electron-phonon scattering (the electron-phonon-impurity interference effect) contributes significantly to the measured resistivities. Our results support the current theoretical idea that this interference-mechanism-induced resistivity varies with ρ0T2, where T is the temperature. Similar observation has also been made in disordered, conducting transition-metal oxide IrO2 thick films.",

author = "Yeh, {S. S.} and Lin, {J. J.} and Jing Xiunian and Zhang Dianlin",

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T1 - Electron-phonon-impurity interference effect in disordered Au56Pd44 and IrO2 thick films

AU - Yeh, S. S.

AU - Lin, J. J.

AU - Xiunian, Jing

AU - Dianlin, Zhang

PY - 2005/7/1

Y1 - 2005/7/1

N2 - We have fabricated a series of Au56Pd44 thick films with a wide range of residual resistivity ρ0 varying from 40to280μΩcm. The resistivities of these films were measured between 15 and 300K. We found that at temperatures below about 0.1θD (θD is the Debye temperature), the interference mechanism between the elastic electron scattering and electron-phonon scattering (the electron-phonon-impurity interference effect) contributes significantly to the measured resistivities. Our results support the current theoretical idea that this interference-mechanism-induced resistivity varies with ρ0T2, where T is the temperature. Similar observation has also been made in disordered, conducting transition-metal oxide IrO2 thick films.

AB - We have fabricated a series of Au56Pd44 thick films with a wide range of residual resistivity ρ0 varying from 40to280μΩcm. The resistivities of these films were measured between 15 and 300K. We found that at temperatures below about 0.1θD (θD is the Debye temperature), the interference mechanism between the elastic electron scattering and electron-phonon scattering (the electron-phonon-impurity interference effect) contributes significantly to the measured resistivities. Our results support the current theoretical idea that this interference-mechanism-induced resistivity varies with ρ0T2, where T is the temperature. Similar observation has also been made in disordered, conducting transition-metal oxide IrO2 thick films.

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ER -

Electron-phonon-impurity interference effect in disordered Au₅₆Pd₄₄ and IrO₂ thick films

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