Electron field emission enhancement based on Al-doped ZnO nanorod arrays with UV exposure

Zi Hao Wang; Chih Chiang Yang; Hsin-Chieh Yu; Hsin Ting Yeh; Yu Ming Peng; Yan Kuin Su

doi:10.1109/TED.2017.2771404

Electron field emission enhancement based on Al-doped ZnO nanorod arrays with UV exposure

Zi Hao Wang, Chih Chiang Yang, Hsin-Chieh Yu^*, Hsin Ting Yeh, Yu Ming Peng, Yan Kuin Su

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

In this paper, Al-doped ZnO nanorods (AZO NRs) were successfully applied on glass substrates through hydrothermal synthesis growth with a fabrication field-emission (FE) device. The enhanced FE properties of AZO NRs were measured. The turn-on fields were reduced by 2.35 and 1.51 V/μm in the dark and under UV light, and the enhanced field enhancement factors (β) were 5708 and 10137, respectively. Results show that the FE performances of AZO NRs were enhanced by the combined effect of increased carrier concentration and UV light illumination.

Original language	American English
Pages (from-to)	251-256
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	1
DOIs	https://doi.org/10.1109/TED.2017.2771404
State	Published - 28 Nov 2017

Keywords

Al-doped ZnO nanorods (AZO NRs)
Field emission (FE)
Hydrothermal

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title = "Electron field emission enhancement based on Al-doped ZnO nanorod arrays with UV exposure",

abstract = "In this paper, Al-doped ZnO nanorods (AZO NRs) were successfully applied on glass substrates through hydrothermal synthesis growth with a fabrication field-emission (FE) device. The enhanced FE properties of AZO NRs were measured. The turn-on fields were reduced by 2.35 and 1.51 V/μm in the dark and under UV light, and the enhanced field enhancement factors (β) were 5708 and 10137, respectively. Results show that the FE performances of AZO NRs were enhanced by the combined effect of increased carrier concentration and UV light illumination.",

keywords = "Al-doped ZnO nanorods (AZO NRs), Field emission (FE), Hydrothermal",

author = "Wang, {Zi Hao} and Yang, {Chih Chiang} and Hsin-Chieh Yu and Yeh, {Hsin Ting} and Peng, {Yu Ming} and Su, {Yan Kuin}",

year = "2017",

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T1 - Electron field emission enhancement based on Al-doped ZnO nanorod arrays with UV exposure

AU - Wang, Zi Hao

AU - Yang, Chih Chiang

AU - Yu, Hsin-Chieh

AU - Yeh, Hsin Ting

AU - Peng, Yu Ming

AU - Su, Yan Kuin

PY - 2017/11/28

Y1 - 2017/11/28

N2 - In this paper, Al-doped ZnO nanorods (AZO NRs) were successfully applied on glass substrates through hydrothermal synthesis growth with a fabrication field-emission (FE) device. The enhanced FE properties of AZO NRs were measured. The turn-on fields were reduced by 2.35 and 1.51 V/μm in the dark and under UV light, and the enhanced field enhancement factors (β) were 5708 and 10137, respectively. Results show that the FE performances of AZO NRs were enhanced by the combined effect of increased carrier concentration and UV light illumination.

AB - In this paper, Al-doped ZnO nanorods (AZO NRs) were successfully applied on glass substrates through hydrothermal synthesis growth with a fabrication field-emission (FE) device. The enhanced FE properties of AZO NRs were measured. The turn-on fields were reduced by 2.35 and 1.51 V/μm in the dark and under UV light, and the enhanced field enhancement factors (β) were 5708 and 10137, respectively. Results show that the FE performances of AZO NRs were enhanced by the combined effect of increased carrier concentration and UV light illumination.

KW - Al-doped ZnO nanorods (AZO NRs)

KW - Field emission (FE)

KW - Hydrothermal

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DO - 10.1109/TED.2017.2771404

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SN - 0018-9383

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SP - 251

EP - 256

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 1

ER -

Electron field emission enhancement based on Al-doped ZnO nanorod arrays with UV exposure

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