Abstract
We have successfully made a series of thick CuxGe100-x films spanning the weakly and strongly localized regimes. With decreasing mole concentration of Cu relative to Ge, the resistivity of film becomes bigger at a given temperature and demonstrates a stronger temperature dependence at low temperatures. When x is big, 46 ≤ x ≤ 56, resistivity increases with the square root of the decreasing temperature, implying a weak-disorder behavior. For x small, 14 ≤ x ≤ 20, resistivity increases exponentially with decreasing temperature, implying a strongly localized behavior. The results show that the low-temperature transport in these films is dominated by the disorder enhanced electron-electron interaction effects.
Original language | English |
---|---|
Pages (from-to) | 1181-1182 |
Number of pages | 2 |
Journal | Physica B: Condensed Matter |
Volume | 284-288 |
Issue number | PART 2 |
DOIs | |
State | Published - Jul 2000 |
Keywords
- Disordered metals
- Electron-electron interaction
- Hopping
- Quantum transport