Electron-electron interaction dominated quantum transport in thick CuGe films

Shih-ying Hsu*, F. J. Shen, Juhn-Jong Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We have successfully made a series of thick Cu x Ge 100-x films spanning the weakly and strongly localized regimes. With decreasing mole concentration of Cu relative to Ge, the resistivity of film becomes bigger at a given temperature and demonstrates a stronger temperature dependence at low temperatures. When x is big, 46 ≤ x ≤ 56, resistivity increases with the square root of the decreasing temperature, implying a weak-disorder behavior. For x small, 14 ≤ x ≤ 20, resistivity increases exponentially with decreasing temperature, implying a strongly localized behavior. The results show that the low-temperature transport in these films is dominated by the disorder enhanced electron-electron interaction effects.

Original languageEnglish
Pages (from-to)1181-1182
Number of pages2
JournalPhysica B: Condensed Matter
Volume284-288
Issue numberPART 2
DOIs
StatePublished - Jul 2000

Keywords

  • Disordered metals
  • Electron-electron interaction
  • Hopping
  • Quantum transport

Fingerprint

Dive into the research topics of 'Electron-electron interaction dominated quantum transport in thick CuGe films'. Together they form a unique fingerprint.

Cite this