Electron Cyclotron Resonance Hydrogen and Nitrogen Plasma Surface Passivation of AlGaAs/GaAs Heterojunction Bipolar Transistors

Q. Wang; Edward S. Yang; Pei-Wen Li; Z. Lu; Richard M. Osgood; Wen I. Wang

doi:10.1109/55.144966

Electron Cyclotron Resonance Hydrogen and Nitrogen Plasma Surface Passivation of AlGaAs/GaAs Heterojunction Bipolar Transistors

Q. Wang, Edward S. Yang, Pei-Wen Li, Z. Lu, Richard M. Osgood, Wen I. Wang

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We report the first experiment of electron cyclotron resonance (ECR) hydrogen (H) and nitrogen (N) plasma surface passivation on the AlGaAs/GaAs heterojunction bipolar transistor (HBT). As a result of the plasma processing, the base current ideality factor is improved from 2.67 to 1.96, and the maximum current gain is increased from 720 to 1000. In the low-current regime, the base current is reduced by two orders of magnitude. The nitride layer grown by nitrogen plasma passivates the GaAs surface and appears to be thermally stable without significant degradation.

Original language	English
Pages (from-to)	83-85
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	13
Issue number	2
DOIs	https://doi.org/10.1109/55.144966
State	Published - Feb 1992

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@article{deef3ee61bf54c729012f24ce68df326,

title = "Electron Cyclotron Resonance Hydrogen and Nitrogen Plasma Surface Passivation of AlGaAs/GaAs Heterojunction Bipolar Transistors",

abstract = "We report the first experiment of electron cyclotron resonance (ECR) hydrogen (H) and nitrogen (N) plasma surface passivation on the AlGaAs/GaAs heterojunction bipolar transistor (HBT). As a result of the plasma processing, the base current ideality factor is improved from 2.67 to 1.96, and the maximum current gain is increased from 720 to 1000. In the low-current regime, the base current is reduced by two orders of magnitude. The nitride layer grown by nitrogen plasma passivates the GaAs surface and appears to be thermally stable without significant degradation.",

author = "Q. Wang and Yang, {Edward S.} and Pei-Wen Li and Z. Lu and Osgood, {Richard M.} and Wang, {Wen I.}",

year = "1992",

month = feb,

doi = "10.1109/55.144966",

language = "English",

volume = "13",

pages = "83--85",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Electron Cyclotron Resonance Hydrogen and Nitrogen Plasma Surface Passivation of AlGaAs/GaAs Heterojunction Bipolar Transistors

AU - Wang, Q.

AU - Yang, Edward S.

AU - Li, Pei-Wen

AU - Lu, Z.

AU - Osgood, Richard M.

AU - Wang, Wen I.

PY - 1992/2

Y1 - 1992/2

N2 - We report the first experiment of electron cyclotron resonance (ECR) hydrogen (H) and nitrogen (N) plasma surface passivation on the AlGaAs/GaAs heterojunction bipolar transistor (HBT). As a result of the plasma processing, the base current ideality factor is improved from 2.67 to 1.96, and the maximum current gain is increased from 720 to 1000. In the low-current regime, the base current is reduced by two orders of magnitude. The nitride layer grown by nitrogen plasma passivates the GaAs surface and appears to be thermally stable without significant degradation.

AB - We report the first experiment of electron cyclotron resonance (ECR) hydrogen (H) and nitrogen (N) plasma surface passivation on the AlGaAs/GaAs heterojunction bipolar transistor (HBT). As a result of the plasma processing, the base current ideality factor is improved from 2.67 to 1.96, and the maximum current gain is increased from 720 to 1000. In the low-current regime, the base current is reduced by two orders of magnitude. The nitride layer grown by nitrogen plasma passivates the GaAs surface and appears to be thermally stable without significant degradation.

UR - http://www.scopus.com/inward/record.url?scp=0026817616&partnerID=8YFLogxK

U2 - 10.1109/55.144966

DO - 10.1109/55.144966

M3 - Article

AN - SCOPUS:0026817616

SN - 0741-3106

VL - 13

SP - 83

EP - 85

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 2

ER -

Electron Cyclotron Resonance Hydrogen and Nitrogen Plasma Surface Passivation of AlGaAs/GaAs Heterojunction Bipolar Transistors

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