Electron charging and discharging effects of tungsten nanocrystals embedded in silicon dioxide for low-voltage nonvolatile memory technology

T. C. Chang; Po-Tsun Liu; S. T. Yan; S. M. Sze

doi:10.1149/1.1859674

Electron charging and discharging effects of tungsten nanocrystals embedded in silicon dioxide for low-voltage nonvolatile memory technology

T. C. Chang^*, Po-Tsun Liu, S. T. Yan, S. M. Sze

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

Spherical and well-separated tungsten nanocrystals embedded in the SiO ₂ layer are demonstrated for the low-voltage nonvolatile memory device. The tungsten dots are formed, based on the thermal oxidation of the tungsten suicide, with a mean size and aerial density of 4.5 nm and 3.7 × 10¹¹/cm², respectively. A pronounced capacitance-voltage hysteresis is observed with a memory window of 0.95 V under the 3 V programming voltage. Also, the endurance of the memory device is not degraded up to 10 ⁶ write/erase cycles.

Original language	English
Pages (from-to)	G71-G73
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	3
DOIs	https://doi.org/10.1149/1.1859674
State	Published - 7 Apr 2005

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.1859674

Cite this

@article{f5dc6ebdc018406eb1e13f4c3f674d8f,

title = "Electron charging and discharging effects of tungsten nanocrystals embedded in silicon dioxide for low-voltage nonvolatile memory technology",

abstract = "Spherical and well-separated tungsten nanocrystals embedded in the SiO 2 layer are demonstrated for the low-voltage nonvolatile memory device. The tungsten dots are formed, based on the thermal oxidation of the tungsten suicide, with a mean size and aerial density of 4.5 nm and 3.7 × 1011/cm2, respectively. A pronounced capacitance-voltage hysteresis is observed with a memory window of 0.95 V under the 3 V programming voltage. Also, the endurance of the memory device is not degraded up to 10 6 write/erase cycles.",

author = "Chang, {T. C.} and Po-Tsun Liu and Yan, {S. T.} and Sze, {S. M.}",

year = "2005",

month = apr,

day = "7",

doi = "10.1149/1.1859674",

language = "English",

volume = "8",

pages = "G71--G73",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "3",

}

TY - JOUR

T1 - Electron charging and discharging effects of tungsten nanocrystals embedded in silicon dioxide for low-voltage nonvolatile memory technology

AU - Chang, T. C.

AU - Liu, Po-Tsun

AU - Yan, S. T.

AU - Sze, S. M.

PY - 2005/4/7

Y1 - 2005/4/7

N2 - Spherical and well-separated tungsten nanocrystals embedded in the SiO 2 layer are demonstrated for the low-voltage nonvolatile memory device. The tungsten dots are formed, based on the thermal oxidation of the tungsten suicide, with a mean size and aerial density of 4.5 nm and 3.7 × 1011/cm2, respectively. A pronounced capacitance-voltage hysteresis is observed with a memory window of 0.95 V under the 3 V programming voltage. Also, the endurance of the memory device is not degraded up to 10 6 write/erase cycles.

AB - Spherical and well-separated tungsten nanocrystals embedded in the SiO 2 layer are demonstrated for the low-voltage nonvolatile memory device. The tungsten dots are formed, based on the thermal oxidation of the tungsten suicide, with a mean size and aerial density of 4.5 nm and 3.7 × 1011/cm2, respectively. A pronounced capacitance-voltage hysteresis is observed with a memory window of 0.95 V under the 3 V programming voltage. Also, the endurance of the memory device is not degraded up to 10 6 write/erase cycles.

UR - http://www.scopus.com/inward/record.url?scp=15744392463&partnerID=8YFLogxK

U2 - 10.1149/1.1859674

DO - 10.1149/1.1859674

M3 - Article

AN - SCOPUS:15744392463

SN - 1099-0062

VL - 8

SP - G71-G73

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 3

ER -

Electron charging and discharging effects of tungsten nanocrystals embedded in silicon dioxide for low-voltage nonvolatile memory technology

Abstract

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this