Electron beam writing in fabricating planar high-Tc Josephson junctions

S. Tolpygo; B. Nadgorny; S. Shokhor; F. Tafuri; Jiunn-Yuan Lin; A. Bourdillon; M. Gurvitch

doi:10.1016/0921-4534(93)90908-9

Electron beam writing in fabricating planar high-T_c Josephson junctions

S. Tolpygo^*, B. Nadgorny, S. Shokhor, F. Tafuri, Jiunn-Yuan Lin, A. Bourdillon, M. Gurvitch

^*Corresponding author for this work

Institute of Physics

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Electron beam irradiation was utilized to fabricate planar Josephson junctions in Y₁Ba₂Cu₃O₇ thin films. After the micron-size bridges had been fabricated by way of standard optical lithography, they were modified using a well focused nanometer STEM probe with beam energy within the range of 80 - 120 keV. Modified junctions exhibit a two-step normal/superconductor transition. We attribute the lower transition temperature, which is of the order of 77 K, to the transition of the damaged region. Shapiro steps under applied microwave radiation of the frequency 10-15 GHz, as well as oscillation of the critical current in a magnetic field were observed up to 70 K. A comparison with the RSJ model is made and a possible damage mechanism is discussed.

Original language	English
Pages (from-to)	211-214
Number of pages	4
Journal	Physica C: Superconductivity and its applications
Volume	209
Issue number	1-3
DOIs	https://doi.org/10.1016/0921-4534(93)90908-9
State	Published - 20 Apr 1993

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title = "Electron beam writing in fabricating planar high-Tc Josephson junctions",

abstract = "Electron beam irradiation was utilized to fabricate planar Josephson junctions in Y1Ba2Cu3O7 thin films. After the micron-size bridges had been fabricated by way of standard optical lithography, they were modified using a well focused nanometer STEM probe with beam energy within the range of 80 - 120 keV. Modified junctions exhibit a two-step normal/superconductor transition. We attribute the lower transition temperature, which is of the order of 77 K, to the transition of the damaged region. Shapiro steps under applied microwave radiation of the frequency 10-15 GHz, as well as oscillation of the critical current in a magnetic field were observed up to 70 K. A comparison with the RSJ model is made and a possible damage mechanism is discussed.",

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T1 - Electron beam writing in fabricating planar high-Tc Josephson junctions

AU - Tolpygo, S.

AU - Nadgorny, B.

AU - Shokhor, S.

AU - Tafuri, F.

AU - Lin, Jiunn-Yuan

AU - Bourdillon, A.

AU - Gurvitch, M.

PY - 1993/4/20

Y1 - 1993/4/20

N2 - Electron beam irradiation was utilized to fabricate planar Josephson junctions in Y1Ba2Cu3O7 thin films. After the micron-size bridges had been fabricated by way of standard optical lithography, they were modified using a well focused nanometer STEM probe with beam energy within the range of 80 - 120 keV. Modified junctions exhibit a two-step normal/superconductor transition. We attribute the lower transition temperature, which is of the order of 77 K, to the transition of the damaged region. Shapiro steps under applied microwave radiation of the frequency 10-15 GHz, as well as oscillation of the critical current in a magnetic field were observed up to 70 K. A comparison with the RSJ model is made and a possible damage mechanism is discussed.

AB - Electron beam irradiation was utilized to fabricate planar Josephson junctions in Y1Ba2Cu3O7 thin films. After the micron-size bridges had been fabricated by way of standard optical lithography, they were modified using a well focused nanometer STEM probe with beam energy within the range of 80 - 120 keV. Modified junctions exhibit a two-step normal/superconductor transition. We attribute the lower transition temperature, which is of the order of 77 K, to the transition of the damaged region. Shapiro steps under applied microwave radiation of the frequency 10-15 GHz, as well as oscillation of the critical current in a magnetic field were observed up to 70 K. A comparison with the RSJ model is made and a possible damage mechanism is discussed.

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ER -

Electron beam writing in fabricating planar high-T_c Josephson junctions

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