Electron and hole effective g factors in InAs/GaSb quantum wells

A. Zakharova; S. T. Yen; K. A. Chao

doi:10.1142/S0219581X0300153X

Electron and hole effective g factors in InAs/GaSb quantum wells

A. Zakharova^*, S. T. Yen, K. A. Chao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We investigate the Landau level structures and the electron and hole effective g factors in InAs/GaSb quantum wells under electric and quantizing magnetic fields perpendicular to interfaces. In these structures, the lowest electron level in InAs can be below the highest heavy-hole level in GaSb at zero magnetic field B. Thus the electron and hole levels anticross with the increasing magnetic field and the strong dependence of the Landau level structures as well as g factors on B is obtained. We have found that the voltage across the structure and the lattice-mismatched strain also produce the essential changes in the Landau level structures as well as the electron and hole g factors.

Original language	English
Pages (from-to)	437-444
Number of pages	8
Journal	International Journal of Nanoscience
Volume	2
Issue number	6
DOIs	https://doi.org/10.1142/S0219581X0300153X
State	Published - 2003
Event	11th International Symposium on Nanostructures - Physics and Technology - St Petersburg Duration: 23 Jun 2003 → 28 Jun 2003

Keywords

quantum wells
magnetic field
g factor

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10.1142/S0219581X0300153X

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title = "Electron and hole effective g factors in InAs/GaSb quantum wells",

abstract = "We investigate the Landau level structures and the electron and hole effective g factors in InAs/GaSb quantum wells under electric and quantizing magnetic fields perpendicular to interfaces. In these structures, the lowest electron level in InAs can be below the highest heavy-hole level in GaSb at zero magnetic field B. Thus the electron and hole levels anticross with the increasing magnetic field and the strong dependence of the Landau level structures as well as g factors on B is obtained. We have found that the voltage across the structure and the lattice-mismatched strain also produce the essential changes in the Landau level structures as well as the electron and hole g factors.",

keywords = "quantum wells, magnetic field, g factor",

author = "A. Zakharova and Yen, {S. T.} and Chao, {K. A.}",

year = "2003",

doi = "10.1142/S0219581X0300153X",

language = "English",

volume = "2",

pages = "437--444",

journal = "International Journal of Nanoscience",

issn = "0219-581X",

publisher = "World Scientific",

number = "6",

note = "11th International Symposium on Nanostructures - Physics and Technology ; Conference date: 23-06-2003 Through 28-06-2003",

}

TY - JOUR

T1 - Electron and hole effective g factors in InAs/GaSb quantum wells

AU - Zakharova, A.

AU - Yen, S. T.

AU - Chao, K. A.

PY - 2003

Y1 - 2003

N2 - We investigate the Landau level structures and the electron and hole effective g factors in InAs/GaSb quantum wells under electric and quantizing magnetic fields perpendicular to interfaces. In these structures, the lowest electron level in InAs can be below the highest heavy-hole level in GaSb at zero magnetic field B. Thus the electron and hole levels anticross with the increasing magnetic field and the strong dependence of the Landau level structures as well as g factors on B is obtained. We have found that the voltage across the structure and the lattice-mismatched strain also produce the essential changes in the Landau level structures as well as the electron and hole g factors.

AB - We investigate the Landau level structures and the electron and hole effective g factors in InAs/GaSb quantum wells under electric and quantizing magnetic fields perpendicular to interfaces. In these structures, the lowest electron level in InAs can be below the highest heavy-hole level in GaSb at zero magnetic field B. Thus the electron and hole levels anticross with the increasing magnetic field and the strong dependence of the Landau level structures as well as g factors on B is obtained. We have found that the voltage across the structure and the lattice-mismatched strain also produce the essential changes in the Landau level structures as well as the electron and hole g factors.

KW - quantum wells

KW - magnetic field

KW - g factor

U2 - 10.1142/S0219581X0300153X

DO - 10.1142/S0219581X0300153X

M3 - Article

SN - 0219-581X

VL - 2

SP - 437

EP - 444

JO - International Journal of Nanoscience

JF - International Journal of Nanoscience

IS - 6

T2 - 11th International Symposium on Nanostructures - Physics and Technology

Y2 - 23 June 2003 through 28 June 2003

ER -

Electron and hole effective g factors in InAs/GaSb quantum wells

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Keywords

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