Electromigration improvement by graphene on Cu wire for next generation VLSI

Y. T. Hung, J. Z. Huang, H. H. Chang, K. P. Huang, O. H. Lee, W. L. Chiu, H. J. Jian, K. C. Huang, W. C. Lo, J. S. Hu, C. I. Wu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The electromigration (EM) failure mode of copper (Cu) interconnects poses a major reliability concern. It has been found that using graphene as a capping layer on Cu could improve the EM failure. However, no reliability data have been reported for graphene grown on Cu damascene structures with foundry’s back-end compatible process. In this study, we show that graphene can be selectively grown on Cu damascene structures as the capping layer on 12″ wafers. An improvement in the EM lifetime was achieved through the graphene capping layer on the Cu line, and a nanotwin Cu structure with a graphene capping layer was also compared.

Original languageEnglish
Title of host publication2021 International Conference on Electronics Packaging, ICEP 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages103-104
Number of pages2
ISBN (Electronic)9784991191114
DOIs
StatePublished - 12 May 2021
Event20th International Conference on Electronics Packaging, ICEP 2021 - Tokyo, Japan
Duration: 12 May 202114 May 2021

Publication series

Name2021 International Conference on Electronics Packaging, ICEP 2021

Conference

Conference20th International Conference on Electronics Packaging, ICEP 2021
Country/TerritoryJapan
CityTokyo
Period12/05/2114/05/21

Keywords

  • Damascene
  • Electromigration
  • Graphene capping layer
  • Nanotwinned Cu

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