Electromagnetic simulation of VLSI circuits by the modified ADI-FDTD method

Jiunn Nan Hwang; Fu-Chiarng Chen

doi:10.1002/mop.28643

Electromagnetic simulation of VLSI circuits by the modified ADI-FDTD method

Jiunn Nan Hwang, Fu-Chiarng Chen^*

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The alternating direction implicit (ADI) finite-difference time-domain (FDTD) method can be used to simulate very large scale integration (VLSI) circuits efficiently as the time step is not restricted by the Courant-Friedrich-Levy stability condition. When the Berenger's split-field perfectly matched layer (PML) absorbing boundary condition is used for the ADI-FDTD method for open region simulation, the PML implementation will make this scheme unstable. In this article, the modified PML conductivity profiles are proposed to improve the stability of this scheme. Numerical simulations of the VLSI interconnect and RF inductor in time domain and frequency domain will be demonstrated to show the efficiency and accuracy of this method.

Original language	English
Pages (from-to)	2530-2534
Number of pages	5
Journal	Microwave and Optical Technology Letters
Volume	56
Issue number	11
DOIs	https://doi.org/10.1002/mop.28643
State	Published - 1 Jan 2014

Keywords

alternating-direction implicit
finite-difference time-domain
modified conductivity profile
perfectly matched layer
stability

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10.1002/mop.28643

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@article{bcae0c161b934dbf8b2270ac1b09b478,

title = "Electromagnetic simulation of VLSI circuits by the modified ADI-FDTD method",

abstract = "The alternating direction implicit (ADI) finite-difference time-domain (FDTD) method can be used to simulate very large scale integration (VLSI) circuits efficiently as the time step is not restricted by the Courant-Friedrich-Levy stability condition. When the Berenger's split-field perfectly matched layer (PML) absorbing boundary condition is used for the ADI-FDTD method for open region simulation, the PML implementation will make this scheme unstable. In this article, the modified PML conductivity profiles are proposed to improve the stability of this scheme. Numerical simulations of the VLSI interconnect and RF inductor in time domain and frequency domain will be demonstrated to show the efficiency and accuracy of this method.",

keywords = "alternating-direction implicit, finite-difference time-domain, modified conductivity profile, perfectly matched layer, stability",

author = "Hwang, {Jiunn Nan} and Fu-Chiarng Chen",

year = "2014",

month = jan,

day = "1",

doi = "10.1002/mop.28643",

language = "English",

volume = "56",

pages = "2530--2534",

journal = "Microwave and Optical Technology Letters",

issn = "0895-2477",

publisher = "John Wiley and Sons Inc.",

number = "11",

}

TY - JOUR

T1 - Electromagnetic simulation of VLSI circuits by the modified ADI-FDTD method

AU - Hwang, Jiunn Nan

AU - Chen, Fu-Chiarng

PY - 2014/1/1

Y1 - 2014/1/1

N2 - The alternating direction implicit (ADI) finite-difference time-domain (FDTD) method can be used to simulate very large scale integration (VLSI) circuits efficiently as the time step is not restricted by the Courant-Friedrich-Levy stability condition. When the Berenger's split-field perfectly matched layer (PML) absorbing boundary condition is used for the ADI-FDTD method for open region simulation, the PML implementation will make this scheme unstable. In this article, the modified PML conductivity profiles are proposed to improve the stability of this scheme. Numerical simulations of the VLSI interconnect and RF inductor in time domain and frequency domain will be demonstrated to show the efficiency and accuracy of this method.

AB - The alternating direction implicit (ADI) finite-difference time-domain (FDTD) method can be used to simulate very large scale integration (VLSI) circuits efficiently as the time step is not restricted by the Courant-Friedrich-Levy stability condition. When the Berenger's split-field perfectly matched layer (PML) absorbing boundary condition is used for the ADI-FDTD method for open region simulation, the PML implementation will make this scheme unstable. In this article, the modified PML conductivity profiles are proposed to improve the stability of this scheme. Numerical simulations of the VLSI interconnect and RF inductor in time domain and frequency domain will be demonstrated to show the efficiency and accuracy of this method.

KW - alternating-direction implicit

KW - finite-difference time-domain

KW - modified conductivity profile

KW - perfectly matched layer

KW - stability

UR - http://www.scopus.com/inward/record.url?scp=84907004120&partnerID=8YFLogxK

U2 - 10.1002/mop.28643

DO - 10.1002/mop.28643

M3 - Article

AN - SCOPUS:84907004120

VL - 56

SP - 2530

EP - 2534

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

SN - 0895-2477

IS - 11

ER -

Electromagnetic simulation of VLSI circuits by the modified ADI-FDTD method

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Keywords

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