Electroless plating with Pd induced crystallization of amorphous silicon thin films

Guo Ren Hu; Yew-Chuhg Wu; Chi Wei Chao; Tian Jiun Huang

doi:10.1143/JJAP.41.6356

Electroless plating with Pd induced crystallization of amorphous silicon thin films

Guo Ren Hu, Yew-Chuhg Wu^*, Chi Wei Chao, Tian Jiun Huang

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A metal-induced crystallization method can be used to decrease the crystallization temperature of amorphous silicon (a-Si). In this study, Pd metal was deposited by an electroless plating method. After it was annealed at 550°C, two kinds of needlelike grains were found. The direction of the primary grain was along 〈211〉 and the growth of the secondary grain occurred along the 〈011〉 direction.

Original language	English
Pages (from-to)	6356-6357
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	41
Issue number	11R
DOIs	https://doi.org/10.1143/JJAP.41.6356
State	Published - Nov 2002

Keywords

Amorphous silicon
Electroless plating
Metal-induced-crystallization
Polycrystalline silicon
Thin film transistor

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abstract = "A metal-induced crystallization method can be used to decrease the crystallization temperature of amorphous silicon (a-Si). In this study, Pd metal was deposited by an electroless plating method. After it was annealed at 550°C, two kinds of needlelike grains were found. The direction of the primary grain was along 〈211〉 and the growth of the secondary grain occurred along the 〈011〉 direction.",

keywords = "Amorphous silicon, Electroless plating, Metal-induced-crystallization, Polycrystalline silicon, Thin film transistor",

author = "Hu, {Guo Ren} and Yew-Chuhg Wu and Chao, {Chi Wei} and Huang, {Tian Jiun}",

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AU - Hu, Guo Ren

AU - Wu, Yew-Chuhg

AU - Chao, Chi Wei

AU - Huang, Tian Jiun

PY - 2002/11

Y1 - 2002/11

N2 - A metal-induced crystallization method can be used to decrease the crystallization temperature of amorphous silicon (a-Si). In this study, Pd metal was deposited by an electroless plating method. After it was annealed at 550°C, two kinds of needlelike grains were found. The direction of the primary grain was along 〈211〉 and the growth of the secondary grain occurred along the 〈011〉 direction.

AB - A metal-induced crystallization method can be used to decrease the crystallization temperature of amorphous silicon (a-Si). In this study, Pd metal was deposited by an electroless plating method. After it was annealed at 550°C, two kinds of needlelike grains were found. The direction of the primary grain was along 〈211〉 and the growth of the secondary grain occurred along the 〈011〉 direction.

KW - Amorphous silicon

KW - Electroless plating

KW - Metal-induced-crystallization

KW - Polycrystalline silicon

KW - Thin film transistor

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DO - 10.1143/JJAP.41.6356

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 11R

ER -

Electroless plating with Pd induced crystallization of amorphous silicon thin films

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Keywords

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