Electro-optic beam scanner in KTiOPO4

Yi Chiu*, D. D. Stancil, T. E. Schlesinger, W. P. Risk

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

We have fabricated and demonstrated both wafer and waveguide electro-optic beam scanners in KTiOPO4 using alternating domain-inverted triangular patterns in the substrate. This device is an extension of previous work in LiTaO3. The domain inversion was achieved by pulsed electric field poling. The deflection sensitivity was 2.1 mrad/kV, compared to the calculated value of 2.3 mrad/kV for this geometry. The bandwidth of the devices was measured to be at least 200 kHz, which was limited by the high voltage driver.

Original languageEnglish
Pages (from-to)3134-3136
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number21
DOIs
StatePublished - 18 Nov 1996

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