Electro-optic beam scanner in KTiOPO4

Yi Chiu; D. D. Stancil; T. E. Schlesinger; W. P. Risk

doi:10.1063/1.116806

Electro-optic beam scanner in KTiOPO₄

Yi Chiu^*, D. D. Stancil, T. E. Schlesinger, W. P. Risk

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

We have fabricated and demonstrated both wafer and waveguide electro-optic beam scanners in KTiOPO₄ using alternating domain-inverted triangular patterns in the substrate. This device is an extension of previous work in LiTaO₃. The domain inversion was achieved by pulsed electric field poling. The deflection sensitivity was 2.1 mrad/kV, compared to the calculated value of 2.3 mrad/kV for this geometry. The bandwidth of the devices was measured to be at least 200 kHz, which was limited by the high voltage driver.

Original language	English
Pages (from-to)	3134-3136
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	21
DOIs	https://doi.org/10.1063/1.116806
State	Published - 18 Nov 1996

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abstract = "We have fabricated and demonstrated both wafer and waveguide electro-optic beam scanners in KTiOPO4 using alternating domain-inverted triangular patterns in the substrate. This device is an extension of previous work in LiTaO3. The domain inversion was achieved by pulsed electric field poling. The deflection sensitivity was 2.1 mrad/kV, compared to the calculated value of 2.3 mrad/kV for this geometry. The bandwidth of the devices was measured to be at least 200 kHz, which was limited by the high voltage driver.",

author = "Yi Chiu and Stancil, {D. D.} and Schlesinger, {T. E.} and Risk, {W. P.}",

year = "1996",

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AU - Chiu, Yi

AU - Stancil, D. D.

AU - Schlesinger, T. E.

AU - Risk, W. P.

PY - 1996/11/18

Y1 - 1996/11/18

N2 - We have fabricated and demonstrated both wafer and waveguide electro-optic beam scanners in KTiOPO4 using alternating domain-inverted triangular patterns in the substrate. This device is an extension of previous work in LiTaO3. The domain inversion was achieved by pulsed electric field poling. The deflection sensitivity was 2.1 mrad/kV, compared to the calculated value of 2.3 mrad/kV for this geometry. The bandwidth of the devices was measured to be at least 200 kHz, which was limited by the high voltage driver.

AB - We have fabricated and demonstrated both wafer and waveguide electro-optic beam scanners in KTiOPO4 using alternating domain-inverted triangular patterns in the substrate. This device is an extension of previous work in LiTaO3. The domain inversion was achieved by pulsed electric field poling. The deflection sensitivity was 2.1 mrad/kV, compared to the calculated value of 2.3 mrad/kV for this geometry. The bandwidth of the devices was measured to be at least 200 kHz, which was limited by the high voltage driver.

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DO - 10.1063/1.116806

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VL - 69

SP - 3134

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Electro-optic beam scanner in KTiOPO₄

Abstract

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