Abstract
The challenges involved in the realization of microcavity light emitters using photonic bandgap (PBG) crystals with electrical injection were described. Metal-organic vapor phase epitaxy (MOVPE) was used for the growth of the device heterostructure on GaAs substrate. The measured far-field radiation patterns showed considerable linewidth narrowing in the case of missing PBG formation and confirmed that the lasing originates from the defect mode.
Original language | English |
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Pages (from-to) | 76-77 |
Number of pages | 2 |
Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
Volume | 1 |
DOIs | |
State | Published - 2001 |
Event | 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society - San Diego, CA, United States Duration: 11 Nov 2001 → 15 Nov 2001 |