Electrically injected 1.3-μm quantum-dot photonic-crystal surface-emitting lasers

Keyphrases

• Quantum Dots 100%
• Photonic-crystal Surface-emitting Laser 100%
• GaAs Quantum Dot 50%
• Indium Tin Oxide 50%
• Device Fabrication 50%
• InGaAs 50%
• Room Temperature Lasing 50%
• Circular Beam 50%
• Threshold Current Density 50%
• Lasing Modes 50%
• Band-edge Lasing 50%
• Lasing Emission 50%
• Transparent Conductive Layer 50%
• Low Divergence Angle 50%
• Photonic Crystal Slab 50%
• Substrate Structure 50%
• PCSEL 50%
• Optical Output 50%

Engineering

• Quantum Dot 100%
• Photonics 100%
• Emitting Laser 100%
• Crystal Surface 100%
• Gallium Arsenide 33%
• Band Edge 33%
• Room Temperature 33%
• Lasing Mode 33%
• Indium-Tin-Oxide 33%
• Dot Layer 33%
• Indium Gallium Arsenide 33%
• Divergence Angle 33%
• Threshold Current Density 33%
• Circular Beam 33%

Material Science

• Quantum Dot 100%
• Surface (Surface Science) 100%
• Photonic Crystal 100%
• Density 33%
• Gallium Arsenide 33%
• Indium Tin Oxide 33%
• Indium Gallium Arsenide 33%
• Device Fabrication 33%