Electrically injected 1.3-μm quantum-dot photonic-crystal surface-emitting lasers

Ming Yang Hsu; Kuo-Jui Lin; Chien Hung Pan

doi:10.1364/OE.25.032697

Electrically injected 1.3-μm quantum-dot photonic-crystal surface-emitting lasers

Ming Yang Hsu, Kuo-Jui Lin^*, Chien Hung Pan

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

We have fabricated electrically injected InAs/InGaAs/GaAs quantum-dot (QD) photonic-crystal (PC) surface-emitting lasers (SELs) and successfully demonstrated room-temperature lasing emissions at 1.3-μm wavelength for the first time. The PCSEL device fabrication was greatly simplified by deposition of transparent conducting layer of indium-tin-oxide over “PC slab-on-substrate” structure. The threshold current density per QD layer was as low as 50 A/cm²/layer; however, the optical output was limited to 2 mW. The band-edge lasing mode was identified and near-circular beam with narrow divergence angle less than 2° was achieved.

Original language	English
Pages (from-to)	32697-32704
Number of pages	8
Journal	Optics Express
Volume	25
Issue number	26
DOIs	https://doi.org/10.1364/OE.25.032697
State	Published - 25 Dec 2017

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title = "Electrically injected 1.3-μm quantum-dot photonic-crystal surface-emitting lasers",

abstract = "We have fabricated electrically injected InAs/InGaAs/GaAs quantum-dot (QD) photonic-crystal (PC) surface-emitting lasers (SELs) and successfully demonstrated room-temperature lasing emissions at 1.3-μm wavelength for the first time. The PCSEL device fabrication was greatly simplified by deposition of transparent conducting layer of indium-tin-oxide over “PC slab-on-substrate” structure. The threshold current density per QD layer was as low as 50 A/cm2/layer; however, the optical output was limited to 2 mW. The band-edge lasing mode was identified and near-circular beam with narrow divergence angle less than 2° was achieved.",

author = "Hsu, {Ming Yang} and Kuo-Jui Lin and Pan, {Chien Hung}",

note = "Publisher Copyright: {\textcopyright} 2017 Optical Society of America.",

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AU - Hsu, Ming Yang

AU - Lin, Kuo-Jui

AU - Pan, Chien Hung

PY - 2017/12/25

Y1 - 2017/12/25

N2 - We have fabricated electrically injected InAs/InGaAs/GaAs quantum-dot (QD) photonic-crystal (PC) surface-emitting lasers (SELs) and successfully demonstrated room-temperature lasing emissions at 1.3-μm wavelength for the first time. The PCSEL device fabrication was greatly simplified by deposition of transparent conducting layer of indium-tin-oxide over “PC slab-on-substrate” structure. The threshold current density per QD layer was as low as 50 A/cm2/layer; however, the optical output was limited to 2 mW. The band-edge lasing mode was identified and near-circular beam with narrow divergence angle less than 2° was achieved.

AB - We have fabricated electrically injected InAs/InGaAs/GaAs quantum-dot (QD) photonic-crystal (PC) surface-emitting lasers (SELs) and successfully demonstrated room-temperature lasing emissions at 1.3-μm wavelength for the first time. The PCSEL device fabrication was greatly simplified by deposition of transparent conducting layer of indium-tin-oxide over “PC slab-on-substrate” structure. The threshold current density per QD layer was as low as 50 A/cm2/layer; however, the optical output was limited to 2 mW. The band-edge lasing mode was identified and near-circular beam with narrow divergence angle less than 2° was achieved.

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SP - 32697

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JO - Optics Express

JF - Optics Express

IS - 26

ER -

Electrically injected 1.3-μm quantum-dot photonic-crystal surface-emitting lasers

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