Electrical properties of undoped and snte-doped gaxin1-xsb molecular-beam-epitaxially grown on gaas

Jenn-Fang Chen; Shuenn Haw Jaw; Alfred Y. Cho

doi:10.1143/JJAP.34.81

Electrical properties of undoped and snte-doped ga_xin₁-_xsb molecular-beam-epitaxially grown on gaas

Jenn-Fang Chen, Shuenn Haw Jaw, Alfred Y. Cho

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Electrical properties of undoped and SnTe-doped Ga_xIn_1-xSb on GaAs grown by molecular beam epitaxy are studied. In the studied composition x from 0.65 to 1, source SnTe is found to be an n-type dopant. The SnTe incorporation efficiency in Ga_xIni-_xSb is found to have no significant difference from SnTe in GaSb. The fitted ionized impurity concentrations for GaSb increases proportionally with the sample’s donor concentrations, suggesting that the charged impurities are introduced through SnTe doping. On the other hand, for Ga_xIni-_xSb, the fitted ionized impurity concentrations do not vary with the total donor concentration. This suggests that material inhomogeneities or imperfections in Ga_xIn_1-xSb may be the cause of mobility values which are lower than expected. In addition, the V/III beam equivalent pressure (BEP) ratio is found to critically influence the quality of the SnTe- doped ternary layers.

Original language	English
Pages (from-to)	81-82
Number of pages	2
Journal	Japanese journal of applied physics
Volume	34
Issue number	1
DOIs	https://doi.org/10.1143/JJAP.34.81
State	Published - Jan 1995

Keywords

Dopant incorporation
GalnSb
MBE
SnTe
Transport properties

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title = "Electrical properties of undoped and snte-doped gaxin1-xsb molecular-beam-epitaxially grown on gaas",

abstract = "Electrical properties of undoped and SnTe-doped GaxIn1-xSb on GaAs grown by molecular beam epitaxy are studied. In the studied composition x from 0.65 to 1, source SnTe is found to be an n-type dopant. The SnTe incorporation efficiency in GaxIni-xSb is found to have no significant difference from SnTe in GaSb. The fitted ionized impurity concentrations for GaSb increases proportionally with the sample{\textquoteright}s donor concentrations, suggesting that the charged impurities are introduced through SnTe doping. On the other hand, for GaxIni-xSb, the fitted ionized impurity concentrations do not vary with the total donor concentration. This suggests that material inhomogeneities or imperfections in GaxIn1-xSb may be the cause of mobility values which are lower than expected. In addition, the V/III beam equivalent pressure (BEP) ratio is found to critically influence the quality of the SnTe- doped ternary layers.",

keywords = "Dopant incorporation, GalnSb, MBE, SnTe, Transport properties",

author = "Jenn-Fang Chen and Jaw, {Shuenn Haw} and Cho, {Alfred Y.}",

year = "1995",

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doi = "10.1143/JJAP.34.81",

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T1 - Electrical properties of undoped and snte-doped gaxin1-xsb molecular-beam-epitaxially grown on gaas

AU - Chen, Jenn-Fang

AU - Jaw, Shuenn Haw

AU - Cho, Alfred Y.

PY - 1995/1

Y1 - 1995/1

N2 - Electrical properties of undoped and SnTe-doped GaxIn1-xSb on GaAs grown by molecular beam epitaxy are studied. In the studied composition x from 0.65 to 1, source SnTe is found to be an n-type dopant. The SnTe incorporation efficiency in GaxIni-xSb is found to have no significant difference from SnTe in GaSb. The fitted ionized impurity concentrations for GaSb increases proportionally with the sample’s donor concentrations, suggesting that the charged impurities are introduced through SnTe doping. On the other hand, for GaxIni-xSb, the fitted ionized impurity concentrations do not vary with the total donor concentration. This suggests that material inhomogeneities or imperfections in GaxIn1-xSb may be the cause of mobility values which are lower than expected. In addition, the V/III beam equivalent pressure (BEP) ratio is found to critically influence the quality of the SnTe- doped ternary layers.

AB - Electrical properties of undoped and SnTe-doped GaxIn1-xSb on GaAs grown by molecular beam epitaxy are studied. In the studied composition x from 0.65 to 1, source SnTe is found to be an n-type dopant. The SnTe incorporation efficiency in GaxIni-xSb is found to have no significant difference from SnTe in GaSb. The fitted ionized impurity concentrations for GaSb increases proportionally with the sample’s donor concentrations, suggesting that the charged impurities are introduced through SnTe doping. On the other hand, for GaxIni-xSb, the fitted ionized impurity concentrations do not vary with the total donor concentration. This suggests that material inhomogeneities or imperfections in GaxIn1-xSb may be the cause of mobility values which are lower than expected. In addition, the V/III beam equivalent pressure (BEP) ratio is found to critically influence the quality of the SnTe- doped ternary layers.

KW - Dopant incorporation

KW - GalnSb

KW - MBE

KW - SnTe

KW - Transport properties

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DO - 10.1143/JJAP.34.81

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JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

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ER -

Electrical properties of undoped and snte-doped ga_xin₁-_xsb molecular-beam-epitaxially grown on gaas

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Keywords

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