Electrical properties of metal-ferroelectric-insulator-semiconductor using sol-gel derived SrBi₂Ta₂O₉ film and ultra-thin Si₃N₄ buffer layer

Engineering & Materials Science

• Buffer layers 100%
• Ferroelectric materials 92%
• Sol-gels 92%
• Electric properties 74%
• Semiconductor materials 62%
• Metals 45%
• Data storage equipment 42%
• Perovskite 24%
• Leakage currents 18%
• Electric potential 18%
• X ray diffraction 17%
• Thin films 16%
• Silicon 13%
• Fatigue of materials 12%

Physics & Astronomy

• buffers 59%
• gels 54%
• insulators 51%
• electrical properties 51%
• low voltage 45%
• metals 35%
• random access memory 27%
• perovskites 19%
• leakage 19%
• scaling 16%
• cycles 15%
• optimization 15%
• silicon 12%
• configurations 12%
• diffraction 12%
• thin films 12%
• x rays 10%
• performance 10%

Chemical Compounds

• Electrical Property 58%
• Point Group C∞V 55%
• Voltage 50%
• Leakage Current 46%
• Buffer Solution 45%
• Liquid Film 33%
• Retention Time 32%
• X-Ray Diffraction 17%