Electrical properties of InSb metal/insulator/semiconductor diodes prepared by photochemical vapour deposition

Kai-Feng Huang; J. S. Shie; J. J. Luo; J. S. Chen

doi:10.1016/0040-6090(87)90228-8

Electrical properties of InSb metal/insulator/semiconductor diodes prepared by photochemical vapour deposition

Kai-Feng Huang^*, J. S. Shie, J. J. Luo, J. S. Chen

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Thin SiO₂ films were prepared by photochemical vapour deposition. IR absorption and Auger electron spectroscopy showed that the dominant components of the oxide are silicon and oxygen with a small amount of hydrogen. Metal/insulator/semiconductor (MIS) capacitors were constructed on InSb substrates. Capacitance-voltage characteristics of the MIS capacitors were measured, and a midgap interface state density of the order of 10¹² cm^-2 eV^-1 was determined. The amount of hysteresis observed was found to be about 10% of the inversion bias voltage. Annealing studies were also conducted to improve the electrical properties. After annealing, the midgap interface state density was reduced to 5 × 10¹¹ cm^-2 eV^-1 and the amount of hysteresis reduced to 5% of the inversion bias voltage.

Original language	English
Pages (from-to)	145-152
Number of pages	8
Journal	Thin Solid Films
Volume	151
Issue number	2
DOIs	https://doi.org/10.1016/0040-6090(87)90228-8
State	Published - 3 Aug 1987

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title = "Electrical properties of InSb metal/insulator/semiconductor diodes prepared by photochemical vapour deposition",

abstract = "Thin SiO2 films were prepared by photochemical vapour deposition. IR absorption and Auger electron spectroscopy showed that the dominant components of the oxide are silicon and oxygen with a small amount of hydrogen. Metal/insulator/semiconductor (MIS) capacitors were constructed on InSb substrates. Capacitance-voltage characteristics of the MIS capacitors were measured, and a midgap interface state density of the order of 1012 cm-2 eV-1 was determined. The amount of hysteresis observed was found to be about 10% of the inversion bias voltage. Annealing studies were also conducted to improve the electrical properties. After annealing, the midgap interface state density was reduced to 5 × 1011 cm-2 eV-1 and the amount of hysteresis reduced to 5% of the inversion bias voltage.",

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T1 - Electrical properties of InSb metal/insulator/semiconductor diodes prepared by photochemical vapour deposition

AU - Huang, Kai-Feng

AU - Shie, J. S.

AU - Luo, J. J.

AU - Chen, J. S.

PY - 1987/8/3

Y1 - 1987/8/3

N2 - Thin SiO2 films were prepared by photochemical vapour deposition. IR absorption and Auger electron spectroscopy showed that the dominant components of the oxide are silicon and oxygen with a small amount of hydrogen. Metal/insulator/semiconductor (MIS) capacitors were constructed on InSb substrates. Capacitance-voltage characteristics of the MIS capacitors were measured, and a midgap interface state density of the order of 1012 cm-2 eV-1 was determined. The amount of hysteresis observed was found to be about 10% of the inversion bias voltage. Annealing studies were also conducted to improve the electrical properties. After annealing, the midgap interface state density was reduced to 5 × 1011 cm-2 eV-1 and the amount of hysteresis reduced to 5% of the inversion bias voltage.

AB - Thin SiO2 films were prepared by photochemical vapour deposition. IR absorption and Auger electron spectroscopy showed that the dominant components of the oxide are silicon and oxygen with a small amount of hydrogen. Metal/insulator/semiconductor (MIS) capacitors were constructed on InSb substrates. Capacitance-voltage characteristics of the MIS capacitors were measured, and a midgap interface state density of the order of 1012 cm-2 eV-1 was determined. The amount of hysteresis observed was found to be about 10% of the inversion bias voltage. Annealing studies were also conducted to improve the electrical properties. After annealing, the midgap interface state density was reduced to 5 × 1011 cm-2 eV-1 and the amount of hysteresis reduced to 5% of the inversion bias voltage.

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JO - Thin Solid Films

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Electrical properties of InSb metal/insulator/semiconductor diodes prepared by photochemical vapour deposition

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