Electrical performance and stability of tungsten indium zinc oxide thin-film transistors

Ram Narayan Chauhan; Nidhi Tiwari; Han Ping D. Shieh; Po-Tsun Liu

doi:10.1016/j.matlet.2017.12.020

Electrical performance and stability of tungsten indium zinc oxide thin-film transistors

Ram Narayan Chauhan, Nidhi Tiwari^*, Han Ping D. Shieh, Po-Tsun Liu

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Amorphous tungsten indium zinc oxide thin film transistors (WIZO TFTs) have been prepared using radio-frequency (RF) magnetron co-sputtering system to co-sputter indium zinc oxide (IZO) and indium tungsten oxide (IWO) targets. The electrical performance parameters and positive biased stress (PBS) test of the co-sputtered WIZO TFT were investigated to obtain better characteristics with regards to the IZO and IWO TFT counterparts. The co-sputtered TFT displayed high electrical performance (field effect mobility, µ_FE ∼ 22.30 cm²/Vs, and sub-threshold swing, SS ∼ 0.36 V/decade) and stable electrical behavior (PBS value shift, ΔV_th ∼ 1.23 V) than the IZO (µ_FE ∼ 19.90 cm²/Vs, SS ∼ 0.46 V/decade, ΔV_th ∼ 7.79 V) and IWO (conducting in nature) TFTs for its application in flexible and transparent displays.

Original language	English
Pages (from-to)	293-296
Number of pages	4
Journal	Materials Letters
Volume	214
DOIs	https://doi.org/10.1016/j.matlet.2017.12.020
State	Published - 1 Mar 2018

Keywords

Semiconductor
Sputtering
Thin films

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10.1016/j.matlet.2017.12.020

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title = "Electrical performance and stability of tungsten indium zinc oxide thin-film transistors",

abstract = "Amorphous tungsten indium zinc oxide thin film transistors (WIZO TFTs) have been prepared using radio-frequency (RF) magnetron co-sputtering system to co-sputter indium zinc oxide (IZO) and indium tungsten oxide (IWO) targets. The electrical performance parameters and positive biased stress (PBS) test of the co-sputtered WIZO TFT were investigated to obtain better characteristics with regards to the IZO and IWO TFT counterparts. The co-sputtered TFT displayed high electrical performance (field effect mobility, µFE ∼ 22.30 cm2/Vs, and sub-threshold swing, SS ∼ 0.36 V/decade) and stable electrical behavior (PBS value shift, ΔVth ∼ 1.23 V) than the IZO (µFE ∼ 19.90 cm2/Vs, SS ∼ 0.46 V/decade, ΔVth ∼ 7.79 V) and IWO (conducting in nature) TFTs for its application in flexible and transparent displays.",

keywords = "Semiconductor, Sputtering, Thin films",

author = "Chauhan, {Ram Narayan} and Nidhi Tiwari and Shieh, {Han Ping D.} and Po-Tsun Liu",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

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doi = "10.1016/j.matlet.2017.12.020",

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T1 - Electrical performance and stability of tungsten indium zinc oxide thin-film transistors

AU - Chauhan, Ram Narayan

AU - Tiwari, Nidhi

AU - Shieh, Han Ping D.

AU - Liu, Po-Tsun

PY - 2018/3/1

Y1 - 2018/3/1

N2 - Amorphous tungsten indium zinc oxide thin film transistors (WIZO TFTs) have been prepared using radio-frequency (RF) magnetron co-sputtering system to co-sputter indium zinc oxide (IZO) and indium tungsten oxide (IWO) targets. The electrical performance parameters and positive biased stress (PBS) test of the co-sputtered WIZO TFT were investigated to obtain better characteristics with regards to the IZO and IWO TFT counterparts. The co-sputtered TFT displayed high electrical performance (field effect mobility, µFE ∼ 22.30 cm2/Vs, and sub-threshold swing, SS ∼ 0.36 V/decade) and stable electrical behavior (PBS value shift, ΔVth ∼ 1.23 V) than the IZO (µFE ∼ 19.90 cm2/Vs, SS ∼ 0.46 V/decade, ΔVth ∼ 7.79 V) and IWO (conducting in nature) TFTs for its application in flexible and transparent displays.

AB - Amorphous tungsten indium zinc oxide thin film transistors (WIZO TFTs) have been prepared using radio-frequency (RF) magnetron co-sputtering system to co-sputter indium zinc oxide (IZO) and indium tungsten oxide (IWO) targets. The electrical performance parameters and positive biased stress (PBS) test of the co-sputtered WIZO TFT were investigated to obtain better characteristics with regards to the IZO and IWO TFT counterparts. The co-sputtered TFT displayed high electrical performance (field effect mobility, µFE ∼ 22.30 cm2/Vs, and sub-threshold swing, SS ∼ 0.36 V/decade) and stable electrical behavior (PBS value shift, ΔVth ∼ 1.23 V) than the IZO (µFE ∼ 19.90 cm2/Vs, SS ∼ 0.46 V/decade, ΔVth ∼ 7.79 V) and IWO (conducting in nature) TFTs for its application in flexible and transparent displays.

KW - Semiconductor

KW - Sputtering

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=85039146844&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2017.12.020

DO - 10.1016/j.matlet.2017.12.020

M3 - Article

AN - SCOPUS:85039146844

SN - 0167-577X

VL - 214

SP - 293

EP - 296

JO - Materials Letters

JF - Materials Letters

ER -

Electrical performance and stability of tungsten indium zinc oxide thin-film transistors

Abstract

Keywords

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