Electrical degradation of n-channel poly-Si TFT under AC stress

C. W. Chen; T. C. Chang; Po-Tsun Liu; H. Y. Lu; T. M. Tsai; C. F. Weng; C. W. Hu; Tseung-Yuen Tseng

doi:10.1149/1.1960173

Electrical degradation of n-channel poly-Si TFT under AC stress

C. W. Chen^*, T. C. Chang, Po-Tsun Liu, H. Y. Lu, T. M. Tsai, C. F. Weng, C. W. Hu, Tseung-Yuen Tseng

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The degradation of n-channel poly-silicon thin film transistor (poly-Si TFT) has been investigated under dynamic voltage stress. The ON-current of TFT is 0.03 times the initial value after 1000 s stress. However, both the sub-threshold swing and threshold voltage almost kept well during the ac stress. The current crowding effect was rapidly increased with the increasing of stress duration. The creation of effective trap density in tail-states of poly-Si film is responsible for the electrical degradation of poly-Si TFT. Moreover, the damaged regions were evidenced to be mainly near the source/drain regions according to the electrical analyses.

Original language	English
Pages (from-to)	H69-H71
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	9
DOIs	https://doi.org/10.1149/1.1960173
State	Published - 2005

Access to Document

10.1149/1.1960173

Cite this

@article{f5b9dc35361e4b70a4e163e8fe488449,

title = "Electrical degradation of n-channel poly-Si TFT under AC stress",

abstract = "The degradation of n-channel poly-silicon thin film transistor (poly-Si TFT) has been investigated under dynamic voltage stress. The ON-current of TFT is 0.03 times the initial value after 1000 s stress. However, both the sub-threshold swing and threshold voltage almost kept well during the ac stress. The current crowding effect was rapidly increased with the increasing of stress duration. The creation of effective trap density in tail-states of poly-Si film is responsible for the electrical degradation of poly-Si TFT. Moreover, the damaged regions were evidenced to be mainly near the source/drain regions according to the electrical analyses.",

author = "Chen, {C. W.} and Chang, {T. C.} and Po-Tsun Liu and Lu, {H. Y.} and Tsai, {T. M.} and Weng, {C. F.} and Hu, {C. W.} and Tseung-Yuen Tseng",

year = "2005",

doi = "10.1149/1.1960173",

language = "English",

volume = "8",

pages = "H69--H71",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "9",

}

TY - JOUR

T1 - Electrical degradation of n-channel poly-Si TFT under AC stress

AU - Chen, C. W.

AU - Chang, T. C.

AU - Liu, Po-Tsun

AU - Lu, H. Y.

AU - Tsai, T. M.

AU - Weng, C. F.

AU - Hu, C. W.

AU - Tseng, Tseung-Yuen

PY - 2005

Y1 - 2005

N2 - The degradation of n-channel poly-silicon thin film transistor (poly-Si TFT) has been investigated under dynamic voltage stress. The ON-current of TFT is 0.03 times the initial value after 1000 s stress. However, both the sub-threshold swing and threshold voltage almost kept well during the ac stress. The current crowding effect was rapidly increased with the increasing of stress duration. The creation of effective trap density in tail-states of poly-Si film is responsible for the electrical degradation of poly-Si TFT. Moreover, the damaged regions were evidenced to be mainly near the source/drain regions according to the electrical analyses.

AB - The degradation of n-channel poly-silicon thin film transistor (poly-Si TFT) has been investigated under dynamic voltage stress. The ON-current of TFT is 0.03 times the initial value after 1000 s stress. However, both the sub-threshold swing and threshold voltage almost kept well during the ac stress. The current crowding effect was rapidly increased with the increasing of stress duration. The creation of effective trap density in tail-states of poly-Si film is responsible for the electrical degradation of poly-Si TFT. Moreover, the damaged regions were evidenced to be mainly near the source/drain regions according to the electrical analyses.

UR - http://www.scopus.com/inward/record.url?scp=25144491179&partnerID=8YFLogxK

U2 - 10.1149/1.1960173

DO - 10.1149/1.1960173

M3 - Article

AN - SCOPUS:25144491179

SN - 1099-0062

VL - 8

SP - H69-H71

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 9

ER -

Electrical degradation of n-channel poly-Si TFT under AC stress

Abstract

Access to Document

Other files and links

Fingerprint

Cite this