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Electrical Conductivity Improvement of Point Defects in 4H-SiC
Chih Shan Tan
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Corresponding author for this work
Institute of Electronics
Research output
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Contribution to journal
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Article
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peer-review
8
Scopus citations
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Keyphrases
4H-SiC
100%
4H-SiC Substrates
60%
Atom Vacancy Defects
20%
Atomic Model
20%
Bandgap Property
20%
Conductivity Improvement
100%
Electrical Conductivity
100%
High Electrical Conductivity
40%
High Melting Temperature
20%
Interstitial Defects
20%
Wide Bandgap
20%
Engineering
Band Gap
33%
Electrical Conductivity
100%
High Electrical Conductivity
66%
Melting Point
33%
Melting Temperature
33%
Material Science
Electrical Conductivity
100%
Interstitial Defect
20%
Point Defect
100%
Vacancy Defect
20%