Electrical Characteristics of Si0.8Ge0.2p-MOSFET With TMA Pre-Doping and NH3Plasma IL Treatment

Meng Chien Lee, Nien Ju Chung, Hung Ru Lin, Wei Li Lee, Yun Yan Chung, Shin Yuan Wang, Guang Li Luo, Chao Hsin Chien*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We successfully fabricated p-MOSFETs on Si0.8Ge0.2 substrate using trimethylaluminum (TMA) pre-doping and NH3 plasma as interfacial layer (IL) treatment for HfO2-based gate stacks. X-ray photoelectron spectroscopy (XPS) findings indicated that SiGe interface with TMA pre-doping and NH3 plasma was free from Ge-O bonds and mainly composed of Si-N and Al-O bonds. With this IL treatment, p-MOSFET revealed an improved subthreshold swing of 98 mV/decade and a high ION/IOFF ratio of 6×106. Furthermore, the ID - VD curves of p-MOSFET showed that the driving current was enhanced from 0.5 to 1.8μA/μm at VD = -1 V. Therefore, the proposed scheme is a simple technique to achieve a high-quality interface on a SiGe substrate.

Original languageEnglish
Pages (from-to)1776-1780
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume69
Issue number4
DOIs
StatePublished - 1 Apr 2022

Keywords

  • Interface passivation
  • p-MOSFET
  • remote plasma nitridation
  • SiGe channel
  • trimethylaluminum (TMA) pre-doping

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