Electrical Characteristics of Si0.8Ge0.2p-MOSFET With TMA Pre-Doping and NH3Plasma IL Treatment

Meng Chien Lee; Nien Ju Chung; Hung Ru Lin; Wei Li Lee; Yun Yan Chung; Shin Yuan Wang; Guang Li Luo; Chao Hsin Chien

doi:10.1109/TED.2022.3153425

Electrical Characteristics of Si_0.8Ge_0.2p-MOSFET With TMA Pre-Doping and NH₃Plasma IL Treatment

Meng Chien Lee, Nien Ju Chung, Hung Ru Lin, Wei Li Lee, Yun Yan Chung, Shin Yuan Wang, Guang Li Luo, Chao Hsin Chien^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We successfully fabricated p-MOSFETs on Si0.8Ge0.2 substrate using trimethylaluminum (TMA) pre-doping and NH3 plasma as interfacial layer (IL) treatment for HfO2-based gate stacks. X-ray photoelectron spectroscopy (XPS) findings indicated that SiGe interface with TMA pre-doping and NH3 plasma was free from Ge-O bonds and mainly composed of Si-N and Al-O bonds. With this IL treatment, p-MOSFET revealed an improved subthreshold swing of 98 mV/decade and a high ION/IOFF ratio of 6×106. Furthermore, the ID - VD curves of p-MOSFET showed that the driving current was enhanced from 0.5 to 1.8μA/μm at VD = -1 V. Therefore, the proposed scheme is a simple technique to achieve a high-quality interface on a SiGe substrate.

Original language	English
Pages (from-to)	1776-1780
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	69
Issue number	4
DOIs	https://doi.org/10.1109/TED.2022.3153425
State	Published - 1 Apr 2022

Keywords

Interface passivation
p-MOSFET
remote plasma nitridation
SiGe channel
trimethylaluminum (TMA) pre-doping

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10.1109/TED.2022.3153425

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@article{9b5e7bd6067e4890a823f8bb131aab68,

title = "Electrical Characteristics of Si0.8Ge0.2p-MOSFET With TMA Pre-Doping and NH3Plasma IL Treatment",

abstract = "We successfully fabricated p-MOSFETs on Si0.8Ge0.2 substrate using trimethylaluminum (TMA) pre-doping and NH3 plasma as interfacial layer (IL) treatment for HfO2-based gate stacks. X-ray photoelectron spectroscopy (XPS) findings indicated that SiGe interface with TMA pre-doping and NH3 plasma was free from Ge-O bonds and mainly composed of Si-N and Al-O bonds. With this IL treatment, p-MOSFET revealed an improved subthreshold swing of 98 mV/decade and a high ION/IOFF ratio of 6×106. Furthermore, the ID - VD curves of p-MOSFET showed that the driving current was enhanced from 0.5 to 1.8μA/μm at VD = -1 V. Therefore, the proposed scheme is a simple technique to achieve a high-quality interface on a SiGe substrate.",

keywords = "Interface passivation, p-MOSFET, remote plasma nitridation, SiGe channel, trimethylaluminum (TMA) pre-doping",

author = "Lee, {Meng Chien} and Chung, {Nien Ju} and Lin, {Hung Ru} and Lee, {Wei Li} and Chung, {Yun Yan} and Wang, {Shin Yuan} and Luo, {Guang Li} and Chien, {Chao Hsin}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2022",

month = apr,

day = "1",

doi = "10.1109/TED.2022.3153425",

language = "English",

volume = "69",

pages = "1776--1780",

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TY - JOUR

T1 - Electrical Characteristics of Si0.8Ge0.2p-MOSFET With TMA Pre-Doping and NH3Plasma IL Treatment

AU - Lee, Meng Chien

AU - Chung, Nien Ju

AU - Lin, Hung Ru

AU - Lee, Wei Li

AU - Chung, Yun Yan

AU - Wang, Shin Yuan

AU - Luo, Guang Li

AU - Chien, Chao Hsin

PY - 2022/4/1

Y1 - 2022/4/1

N2 - We successfully fabricated p-MOSFETs on Si0.8Ge0.2 substrate using trimethylaluminum (TMA) pre-doping and NH3 plasma as interfacial layer (IL) treatment for HfO2-based gate stacks. X-ray photoelectron spectroscopy (XPS) findings indicated that SiGe interface with TMA pre-doping and NH3 plasma was free from Ge-O bonds and mainly composed of Si-N and Al-O bonds. With this IL treatment, p-MOSFET revealed an improved subthreshold swing of 98 mV/decade and a high ION/IOFF ratio of 6×106. Furthermore, the ID - VD curves of p-MOSFET showed that the driving current was enhanced from 0.5 to 1.8μA/μm at VD = -1 V. Therefore, the proposed scheme is a simple technique to achieve a high-quality interface on a SiGe substrate.

AB - We successfully fabricated p-MOSFETs on Si0.8Ge0.2 substrate using trimethylaluminum (TMA) pre-doping and NH3 plasma as interfacial layer (IL) treatment for HfO2-based gate stacks. X-ray photoelectron spectroscopy (XPS) findings indicated that SiGe interface with TMA pre-doping and NH3 plasma was free from Ge-O bonds and mainly composed of Si-N and Al-O bonds. With this IL treatment, p-MOSFET revealed an improved subthreshold swing of 98 mV/decade and a high ION/IOFF ratio of 6×106. Furthermore, the ID - VD curves of p-MOSFET showed that the driving current was enhanced from 0.5 to 1.8μA/μm at VD = -1 V. Therefore, the proposed scheme is a simple technique to achieve a high-quality interface on a SiGe substrate.

KW - Interface passivation

KW - p-MOSFET

KW - remote plasma nitridation

KW - SiGe channel

KW - trimethylaluminum (TMA) pre-doping

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U2 - 10.1109/TED.2022.3153425

DO - 10.1109/TED.2022.3153425

M3 - Article

AN - SCOPUS:85126297785

SN - 0018-9383

VL - 69

SP - 1776

EP - 1780

JO - Ieee Transactions On Electron Devices

JF - Ieee Transactions On Electron Devices

IS - 4

ER -

Electrical Characteristics of Si_0.8Ge_0.2p-MOSFET With TMA Pre-Doping and NH₃Plasma IL Treatment

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