Electrical Characteristics of Magnesium Doped a-IGZO RRAM: Chemical Vapor Deposition using Enhanced Atmospheric Pressure-Plasma

Keyphrases

• Chemical Vapor Deposition 100%
• Electrical Characteristics 100%
• Amorphous InGaZnO (a-IGZO) 100%
• Atmospheric Pressure Plasma 100%
• Magnesium Doped 100%
• RRAM Devices 80%
• Insulator Layer 60%
• Magnesium 60%
• Oxygen Vacancy 40%
• Plasma-enhanced Chemical Vapor Deposition (PECVD) 20%
• Insulator 20%
• MOSFET 20%
• Atmospheric Pressure 20%
• Leakage Current 20%
• Magnetoresistance 20%
• Metal-insulator-metal Structure 20%
• Resistivity 20%
• Phase Change 20%
• Transistor Technology 20%
• Downscaling 20%
• Non-volatile Memory 20%
• Data Storage 20%
• Thin Oxides 20%
• Floating Gate Memory 20%
• Ferroelectric Memory 20%
• Pressure Plasma 20%
• Read Process 20%
• Phase Change Random Access Memory (PCRAM) 20%
• Magnesium Doping 20%

Engineering

• Chemical Vapor Deposition 100%
• Vapor Deposition 100%
• Resistive 100%
• Oxygen Vacancy 100%
• Pressure Plasma 100%
• Atmospheric Pressure 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 50%
• Metal-Insulator-Metal 50%
• Oxide Layer 50%
• Nonvolatile Memory 50%
• Electrical Device 50%
• Floating Gate 50%

Material Science

• Chemical Vapor Deposition 100%
• Electrical Property 100%
• Gallium 100%
• Zinc Oxide 100%
• Indium 100%
• Magnesium 100%
• Oxygen Vacancy 40%
• Ferroelectric Material 20%
• Electrical Resistivity 20%
• Oxide Compound 20%
• Metal-Oxide-Semiconductor Field-Effect Transistor 20%
• Metal-Insulator-Metal Structure 20%
• Plasma-Enhanced Chemical Vapor Deposition 20%