Abstract
The electrical properties of flexible organic thin-film transistors fabricated on stainless steel substrates were measured under different bending conditions. We found that the compressive strain resulted in an increased mobility while the tensile strain leaded to a decreased one. The strains probably influenced the barrier height between the pentacene grains.
| Original language | English |
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| Pages | 2239-2241 |
| Number of pages | 3 |
| State | Published - 1 Dec 2010 |
| Event | 17th International Display Workshops, IDW'10 - Fukuoka, Japan Duration: 1 Dec 2010 → 3 Dec 2010 |
Conference
| Conference | 17th International Display Workshops, IDW'10 |
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| Country/Territory | Japan |
| City | Fukuoka |
| Period | 1/12/10 → 3/12/10 |