Electrical characteristics improvement of Dy2O3 thin films by in-situ vacuum anneal

Hiroyuki Yamamoto*, Junichi Taguchi, Shun Ichiro Ohmi, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

Dysprosium oxide (Dy2O3) deposited by MBF on n-Si (100) was investigated. The electrical characteristics of the films seemed to depend on the annealing process after deposition. In the case of ex-situ O 2 RTA for 5 min, the accumulation capacitance in the C-V characteristic decreased by the interfacial layer growth. On the other hands, it was found that excellent C-V characteristics without decrease of accumulation capacitance were obtained by in-situ vacuum anneal.

Original languageEnglish
Pages63-74
Number of pages12
StatePublished - 2003
EventPhysics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues - Salt Lake City, UT, United States
Duration: 20 Oct 200224 Oct 2002

Conference

ConferencePhysics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues
Country/TerritoryUnited States
CitySalt Lake City, UT
Period20/10/0224/10/02

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