Electrical Characteristics Comparison of Ni/Al Source/Drain Electrodes for P-type Channel SnO_xThin Film Transistors

Keyphrases

• Electrical Characteristics 100%
• Thin-film Transistors 100%
• P-type 100%
• Transistor 100%
• Source-drain Electrode 100%
• Characteristic Comparison 100%
• NiAl 100%
• N-channel 33%
• Transistor Device 33%
• Circ 33%
• Al Electrode 33%
• SnO Thin Film 33%
• Annealing 16%
• Active Layer 16%
• Oxides 16%
• Annealing Temperature 16%
• Plastic Substrate 16%
• A-Si 16%
• Simple Design 16%
• P-channel 16%
• Oxide-based 16%
• Ni Electrode 16%
• Furnace Annealing 16%
• Tin Oxide 16%
• Low Process Temperature 16%
• Oxide Semiconductor 16%
• Energy-efficient Design 16%
• Channel Layer 16%
• Complementary Circuits 16%
• Electron Beam Evaporator 16%
• Display Circuit 16%

Engineering

• Thin Films 100%
• Drain Electrode 100%
• Annealing Temperature 50%
• Annealing Furnace 50%
• Active Layer 50%
• Logic Circuit 50%
• Evaporator 50%
• Oxide Semiconductor 50%
• Channel Transistor 50%
• Channel Layer 50%
• Semiconductor Material 50%

Material Science

• Transistor 100%
• Electrical Property 100%
• Thin Films 25%
• Oxide Compound 25%
• Annealing 25%
• Electronic Circuit 25%
• Tin Oxide 12%
• Semiconductor Material 12%
• Oxide Semiconductor 12%