Electrical characteristic fluctuation and suppression in emerging CMOS device and circuit

Hui Wen Cheng; Ming Hung Han; Yiming Li; Kuo Fu Lee; Chun Yen Yiu; Thet Thet Khaing

doi:10.1109/SNW.2010.5562560

Electrical characteristic fluctuation and suppression in emerging CMOS device and circuit

Hui Wen Cheng^*, Ming Hung Han, Yiming Li, Kuo Fu Lee, Chun Yen Yiu, Thet Thet Khaing

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We study the characteristic variability in high-κ metal-gate CMOS device and circuit induced by various intrinsicfluctuation sources. Using an experimentally calibrated 3D device-and-circuit coupled simulation; we estimate the effect of metal-gate work-function fluctuation, oxide-thickness fluctuation, process-variation effect, and random-dopant fluctuation on device DC/AC characteristics. We then predict their impacts on transfer and dynamic properties of digital and analog circuits. Finally, variability suppression techniques are demonstrated from device engineering viewpoints.

Original language	English
Title of host publication	2010 Silicon Nanoelectronics Workshop, SNW 2010
DOIs	https://doi.org/10.1109/SNW.2010.5562560
State	Published - 2010
Event	2010 15th Silicon Nanoelectronics Workshop, SNW 2010 - Honolulu, HI, United States Duration: 13 Jun 2010 → 14 Jun 2010

Publication series

Name	2010 Silicon Nanoelectronics Workshop, SNW 2010

Conference

Conference	2010 15th Silicon Nanoelectronics Workshop, SNW 2010
Country/Territory	United States
City	Honolulu, HI
Period	13/06/10 → 14/06/10

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10.1109/SNW.2010.5562560

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title = "Electrical characteristic fluctuation and suppression in emerging CMOS device and circuit",

abstract = "We study the characteristic variability in high-κ metal-gate CMOS device and circuit induced by various intrinsicfluctuation sources. Using an experimentally calibrated 3D device-and-circuit coupled simulation; we estimate the effect of metal-gate work-function fluctuation, oxide-thickness fluctuation, process-variation effect, and random-dopant fluctuation on device DC/AC characteristics. We then predict their impacts on transfer and dynamic properties of digital and analog circuits. Finally, variability suppression techniques are demonstrated from device engineering viewpoints.",

author = "Cheng, {Hui Wen} and Han, {Ming Hung} and Yiming Li and Lee, {Kuo Fu} and Yiu, {Chun Yen} and Khaing, {Thet Thet}",

year = "2010",

doi = "10.1109/SNW.2010.5562560",

language = "English",

isbn = "9781424477272",

series = "2010 Silicon Nanoelectronics Workshop, SNW 2010",

booktitle = "2010 Silicon Nanoelectronics Workshop, SNW 2010",

note = "2010 15th Silicon Nanoelectronics Workshop, SNW 2010 ; Conference date: 13-06-2010 Through 14-06-2010",

}

Cheng, HW, Han, MH, Li, Y, Lee, KF, Yiu, CY & Khaing, TT 2010, Electrical characteristic fluctuation and suppression in emerging CMOS device and circuit. in 2010 Silicon Nanoelectronics Workshop, SNW 2010., 5562560, 2010 Silicon Nanoelectronics Workshop, SNW 2010, 2010 15th Silicon Nanoelectronics Workshop, SNW 2010, Honolulu, HI, United States, 13/06/10. https://doi.org/10.1109/SNW.2010.5562560

TY - GEN

T1 - Electrical characteristic fluctuation and suppression in emerging CMOS device and circuit

AU - Cheng, Hui Wen

AU - Han, Ming Hung

AU - Li, Yiming

AU - Lee, Kuo Fu

AU - Yiu, Chun Yen

AU - Khaing, Thet Thet

PY - 2010

Y1 - 2010

N2 - We study the characteristic variability in high-κ metal-gate CMOS device and circuit induced by various intrinsicfluctuation sources. Using an experimentally calibrated 3D device-and-circuit coupled simulation; we estimate the effect of metal-gate work-function fluctuation, oxide-thickness fluctuation, process-variation effect, and random-dopant fluctuation on device DC/AC characteristics. We then predict their impacts on transfer and dynamic properties of digital and analog circuits. Finally, variability suppression techniques are demonstrated from device engineering viewpoints.

AB - We study the characteristic variability in high-κ metal-gate CMOS device and circuit induced by various intrinsicfluctuation sources. Using an experimentally calibrated 3D device-and-circuit coupled simulation; we estimate the effect of metal-gate work-function fluctuation, oxide-thickness fluctuation, process-variation effect, and random-dopant fluctuation on device DC/AC characteristics. We then predict their impacts on transfer and dynamic properties of digital and analog circuits. Finally, variability suppression techniques are demonstrated from device engineering viewpoints.

UR - http://www.scopus.com/inward/record.url?scp=77957999552&partnerID=8YFLogxK

U2 - 10.1109/SNW.2010.5562560

DO - 10.1109/SNW.2010.5562560

M3 - Conference contribution

AN - SCOPUS:77957999552

SN - 9781424477272

T3 - 2010 Silicon Nanoelectronics Workshop, SNW 2010

BT - 2010 Silicon Nanoelectronics Workshop, SNW 2010

T2 - 2010 15th Silicon Nanoelectronics Workshop, SNW 2010

Y2 - 13 June 2010 through 14 June 2010

ER -

Electrical characteristic fluctuation and suppression in emerging CMOS device and circuit

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