Electrical bistable memory device based on a poly(styrene- b -4-vinylpyridine) nanostructured diblock copolymer thin film

Ching Mao Huang; Yung Sheng Liu; Chen Chia Chen; Kung-Hwa Wei; Jeng-Tzong Sheu

doi:10.1063/1.3028336

Electrical bistable memory device based on a poly(styrene- b -4-vinylpyridine) nanostructured diblock copolymer thin film

Ching Mao Huang, Yung Sheng Liu, Chen Chia Chen, Kung-Hwa Wei^*, Jeng-Tzong Sheu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

This paper describes the performance of a nonvolatile memory device based on a solution-processed poly(styrene- b -4-vinylpyridine) (PS- b -P4VP) diblock copolymer thin film. The Al/PS- b -P4VP/indium tin oxide memory device featuring metal-coordinated 30 nm P4VP cores exhibited an ON/OFF ratio of 2 × 10⁵, an erase voltage of 0.75 V, a write voltage of -0.5 V, and a retention time of 104 s. The device exhibited a metallic behavior in the ON state, suggesting the formation of metallic filaments through the migration of Al atoms into the P4VP domain during writing. Such nanostructured diblock copolymer thin films open up avenues for fabricating organic memory devices using simple procedures.

Original language	English
Article number	203303
Journal	Applied Physics Letters
Volume	93
Issue number	20
DOIs	https://doi.org/10.1063/1.3028336
State	Published - 2008

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title = "Electrical bistable memory device based on a poly(styrene- b -4-vinylpyridine) nanostructured diblock copolymer thin film",

abstract = "This paper describes the performance of a nonvolatile memory device based on a solution-processed poly(styrene- b -4-vinylpyridine) (PS- b -P4VP) diblock copolymer thin film. The Al/PS- b -P4VP/indium tin oxide memory device featuring metal-coordinated 30 nm P4VP cores exhibited an ON/OFF ratio of 2 × 105, an erase voltage of 0.75 V, a write voltage of -0.5 V, and a retention time of 104 s. The device exhibited a metallic behavior in the ON state, suggesting the formation of metallic filaments through the migration of Al atoms into the P4VP domain during writing. Such nanostructured diblock copolymer thin films open up avenues for fabricating organic memory devices using simple procedures.",

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AU - Huang, Ching Mao

AU - Liu, Yung Sheng

AU - Chen, Chen Chia

AU - Wei, Kung-Hwa

AU - Sheu, Jeng-Tzong

PY - 2008

Y1 - 2008

N2 - This paper describes the performance of a nonvolatile memory device based on a solution-processed poly(styrene- b -4-vinylpyridine) (PS- b -P4VP) diblock copolymer thin film. The Al/PS- b -P4VP/indium tin oxide memory device featuring metal-coordinated 30 nm P4VP cores exhibited an ON/OFF ratio of 2 × 105, an erase voltage of 0.75 V, a write voltage of -0.5 V, and a retention time of 104 s. The device exhibited a metallic behavior in the ON state, suggesting the formation of metallic filaments through the migration of Al atoms into the P4VP domain during writing. Such nanostructured diblock copolymer thin films open up avenues for fabricating organic memory devices using simple procedures.

AB - This paper describes the performance of a nonvolatile memory device based on a solution-processed poly(styrene- b -4-vinylpyridine) (PS- b -P4VP) diblock copolymer thin film. The Al/PS- b -P4VP/indium tin oxide memory device featuring metal-coordinated 30 nm P4VP cores exhibited an ON/OFF ratio of 2 × 105, an erase voltage of 0.75 V, a write voltage of -0.5 V, and a retention time of 104 s. The device exhibited a metallic behavior in the ON state, suggesting the formation of metallic filaments through the migration of Al atoms into the P4VP domain during writing. Such nanostructured diblock copolymer thin films open up avenues for fabricating organic memory devices using simple procedures.

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JF - Applied Physics Letters

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Electrical bistable memory device based on a poly(styrene- b -4-vinylpyridine) nanostructured diblock copolymer thin film

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