Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layers

C. L. Sun; San-Yuan Chen; M. Y. Yang; Albert Chin

doi:10.1016/S0254-0584(02)00199-2

Electrical and structural characteristics of PbTiO₃ thin films with ultra-thin Al₂O₃ buffer layers

C. L. Sun, San-Yuan Chen^*, M. Y. Yang, Albert Chin

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Polycrystalline PbTiO₃ thin films have been prepared on Si substrates with ultra-thin SiO₂ and Al₂O₃ buffer layers by chemical solution deposition, respectively. Although capacitance-voltage characteristics show hysteresis loops in both cases, the memory window of PbTiO₃/Al₂O₃ stacked dielectric is 3.3 V larger than that on SiO₂. In addition, well-behaved capacitance-voltage characteristics are only obtained in PbTiO₃/Al₂O₃ and the PbTiO₃ films on Al₂O₃ have the dielectric constant of 116 larger than 42 of PbTiO₃ films on SiO₂. The leakage current density of PbTiO₃/Al₂O₃ dielectric is 1.3 × 10^-7 A cm^-2 at -2.5 V, which is low enough for deep sub-μm application.

Original language	English
Pages (from-to)	412-415
Number of pages	4
Journal	Materials Chemistry and Physics
Volume	78
Issue number	2
DOIs	https://doi.org/10.1016/S0254-0584(02)00199-2
State	Published - 17 Feb 2003

Keywords

Capacitance-voltage
Dielectric constant
PbTiO
Thin films

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10.1016/S0254-0584(02)00199-2

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title = "Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layers",

abstract = "Polycrystalline PbTiO3 thin films have been prepared on Si substrates with ultra-thin SiO2 and Al2O3 buffer layers by chemical solution deposition, respectively. Although capacitance-voltage characteristics show hysteresis loops in both cases, the memory window of PbTiO3/Al2O3 stacked dielectric is 3.3 V larger than that on SiO2. In addition, well-behaved capacitance-voltage characteristics are only obtained in PbTiO3/Al2O3 and the PbTiO3 films on Al2O3 have the dielectric constant of 116 larger than 42 of PbTiO3 films on SiO2. The leakage current density of PbTiO3/Al2O3 dielectric is 1.3 × 10-7 A cm-2 at -2.5 V, which is low enough for deep sub-μm application.",

keywords = "Capacitance-voltage, Dielectric constant, PbTiO, Thin films",

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TY - JOUR

T1 - Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layers

AU - Sun, C. L.

AU - Chen, San-Yuan

AU - Yang, M. Y.

AU - Chin, Albert

PY - 2003/2/17

Y1 - 2003/2/17

N2 - Polycrystalline PbTiO3 thin films have been prepared on Si substrates with ultra-thin SiO2 and Al2O3 buffer layers by chemical solution deposition, respectively. Although capacitance-voltage characteristics show hysteresis loops in both cases, the memory window of PbTiO3/Al2O3 stacked dielectric is 3.3 V larger than that on SiO2. In addition, well-behaved capacitance-voltage characteristics are only obtained in PbTiO3/Al2O3 and the PbTiO3 films on Al2O3 have the dielectric constant of 116 larger than 42 of PbTiO3 films on SiO2. The leakage current density of PbTiO3/Al2O3 dielectric is 1.3 × 10-7 A cm-2 at -2.5 V, which is low enough for deep sub-μm application.

AB - Polycrystalline PbTiO3 thin films have been prepared on Si substrates with ultra-thin SiO2 and Al2O3 buffer layers by chemical solution deposition, respectively. Although capacitance-voltage characteristics show hysteresis loops in both cases, the memory window of PbTiO3/Al2O3 stacked dielectric is 3.3 V larger than that on SiO2. In addition, well-behaved capacitance-voltage characteristics are only obtained in PbTiO3/Al2O3 and the PbTiO3 films on Al2O3 have the dielectric constant of 116 larger than 42 of PbTiO3 films on SiO2. The leakage current density of PbTiO3/Al2O3 dielectric is 1.3 × 10-7 A cm-2 at -2.5 V, which is low enough for deep sub-μm application.

KW - Capacitance-voltage

KW - Dielectric constant

KW - PbTiO

KW - Thin films

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JO - Materials Chemistry and Physics

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ER -

Electrical and structural characteristics of PbTiO₃ thin films with ultra-thin Al₂O₃ buffer layers

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